Detection and decoding in flash memories with selective binary and non-binary decoding

1. A method for processing data from a flash memory device, comprising:

obtaining one or more read values for a plurality of bits from one or more pages of said flash memory device;

converting said one or more read values for said plurality of bits to a non-binary log likelihood ratio based on a probability that a given data pattern was written to said plurality of bits when a particular pattern was read from said plurality of bits; and

jointly decoding said plurality of bits using said non-binary log likelihood ratio, wherein said panes are encoded independently.

2. The method of claim 1 , wherein said non-binary log likelihood ratio comprises one or more of a log-likelihood ratio, an approximation of a log-likelihood ratio and a reliability value that measures the reliability of a bit decision.

3. The method of claim 1 , wherein said pages are encoded independently using a same binary generator matrix.

4. The method of claim 3 , wherein said step of jointly decoding said plurality of bits uses a single non-binary parity check matrix having non-zero elements comprised of unity Galois field elements.

5. The method of claim 4 , wherein said single non-binary parity check matrix is based on said binary generator matrix.

6. The method of claim 1 , wherein said non-binary log likelihood ratio comprises a memory cell-based Galois Field value that captures intra-cell correlations.

7. The method of claim 1 , wherein said joint decoding comprises a Galois Field non-binary wordline-matched message passing decoding technique.

8. The method of claim 1 , wherein said method comprises a recovery mode that is initiated if a normal operating mode does not successfully decode one or more of said plurality of bits for a given page.

9. The method of claim 8 , wherein said normal operating mode decodes each page independently of other pages.

10. The method of claim 1 , wherein said plurality of pages are from a given wordline.

11. The method of claim 1 , wherein said plurality of pages are from different wordlines.

12. The method of claim 1 , wherein said probability that said given data pattern was written to said plurality of bits when said particular pattern was read from said plurality of bits is obtained from one or more tables.

13. The method of claim 12 , wherein said given data pattern comprises a plurality of bits in a given memory cell.

14. The method of claim 12 , wherein said non-binary log likelihood ratios are computed as follows, given that a particular pattern was read from a cell:

λ( a i b i =00|00)=log [ p (00/00)]− C ,λ( a i b i 01|00)=log [ p (01/00)]− C;

λ( a i b i =10|00)=log [ p (10/00)]− C ,λ( a i b i 11|00)=log [ p (11/00)]− C.

15. The method of claim 1 , wherein said probability that said given data pattern was written to said plurality of bits when said particular pattern was read from said plurality of bits is based on one or more reference cells.

16. The method of claim 1 , wherein said probability that said given data pattern was written to said plurality of bits when said particular pattern was read from said plurality of bits is based on one or more prior decoded decisions.

17. The method of claim 1 , wherein said probability that said given data pattern was written to said plurality of bits when said particular pattern was read from said plurality of bits is based on one or more performance factors of said flash memory device.

18. The method of claim 1 , wherein said method is performed by a hybrid detection and decoding system that, performs binary decoding of individual pages in a normal mode and said non-binary joint decoding of the pages in a wordline in a recovery mode.

19. The method of claim 1 , wherein said non-binary log likelihood ratios are computed. based on one or more of a fixed uniform LLR mapping and a fixed non-uniform LLR mapping.

20. The method of claim 1 , wherein said non-binary log likelihood ratios are computed based on one or more of soft decisions and quantized soft decisions obtained using a plurality of voltage read retries at a plurality of reference voltages.

21. A tangible machine-readable recordable storage medium for processing data from a flash memory device, wherein one or more software programs when executed by one or more processing devices implement the steps of the method of claim 1 .

22. A flash memory system, comprising:

a reliability unit for converting one or more read values for a plurality of bits from one or more pages of a flash memory device to a non-binary log likelihood ratio based on a probability that a given data pattern was written to said plurality of bits when a particular pattern was read from said plurality of bits; and

a non-binary decoder for jointly decoding said plurality of bits using said non-binary log likelihood ratio, wherein said pages are encoded independently.

23. The flash memory system of claim 22 , further comprising one or more binary LDPC decoders for generating one or more recovered pages based on one or more binary LLRs.

24. The flash memory system of claim 23 , wherein said one or more binary LDPC decoders share one or more hardware elements with said non-binary decoder.

25. The flash memory system of claim 22 , wherein said non-binary decoder jointly processes a plurality of pages of a wordline to generate one or more recovered pages.

26. The flash memory system of claim 22 , further comprising one or more binary encoders that apply one or more non-binary codes to generate one or more symbols.

27. The flash memory system of claim 22 , further comprising a plurality of binary encoders that share one or more hardware elements with one another.