Light-emitting element
View Patent ↗A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.
1. A method for manufacturing a light-emitting element, comprising:
depositing a first insulator including quantum dots on a principal surface of a semiconductor substrate;
depositing a second insulator including quantum dots on the first insulator;
introducing a first impurity of a first conduction type into the first insulator;
introducing a second impurity of a second conduction type into the second insulator, wherein the second conduction type is different from the first conduction type; and
heat-treating the first insulator including the first impurity and the second insulator including the second impurity.
2. The method of claim 1 , wherein the first insulator is composed of a silicon oxide film.
3. The method of claim 2 , wherein the second insulator is composed of a silicon nitride film.
4. The method of claim 1 , wherein said depositing the first insulator on the principal surface comprises adjusting a first flow rate ratio of a first material gas relative to a second material gas such that the first flow rate ratio is greater than or equal to a first standard flow rate ratio.
5. The method of claim 4 , wherein the first material gas includes silicon and the second material gas includes oxygen.
6. The method of claim 4 , wherein said depositing the second insulator on the first insulator comprises adjusting a second flow rate ratio of the first material gas relative to a third material gas such that the second flow rate ratio is greater than or equal to a second standard flow rate ratio.
7. The method of claim 6 , wherein the third material gas includes nitrogen.
8. The method of claim 1 , wherein the first impurity comprises an n-type impurity and the second impurity comprises a p-type impurity.
9. The method of claim 1 , wherein said heat-treating the first insulator and the second insulator includes heat-treating the first insulator and the second insulator in a nitrogen atmosphere.
10. A method for manufacturing a light-emitting element, comprising:
depositing a first insulator on a principal surface of a semiconductor substrate;
depositing a second insulator on the first insulator;
depositing a third insulator on the second insulator, wherein the third insulator has a larger barrier energy against electrons than the second insulator,
wherein the first insulator, the second insulator, and the third insulator each include quantum dots;
introducing a first impurity of a first conduction type into the first insulator;
introducing a second impurity of a second conduction type into the second and third insulators, wherein the second conduction type is different from the first conduction type; and
heat-treating the first insulator including the first impurity, the second insulator including the second impurity and the third insulator including the second impurity.
11. The method of claim 10 , wherein the first impurity comprises an n-type impurity and the second impurity comprises a p-type impurity.
12. The method of claim 10 , wherein said heat-treating the first insulator, the second insulator, and the third insulator includes heat-treating the first insulator, the second insulator, and the third insulator in a nitrogen atmosphere.
13. The method of claim 10 , wherein said depositing the first insulator on the principal surface comprises adjusting a flow rate ratio of a first material gas relative to a second material gas such that the flow rate ratio is greater than or equal to a standard flow rate ratio.
14. The method of claim 13 , wherein the first material gas includes silicon and the second material gas includes oxygen.
15. A method for manufacturing a light-emitting element, comprising:
depositing a first insulator including first quantum dots on a principal surface of a semiconductor substrate, wherein the first quantum dots are of a first conduction type; and
depositing a second insulator including second quantum dots on the first insulator, wherein the second quantum dots are of a second conduction type, and wherein the second conduction type is different than the first conduction type.
16. The method of claim 15 , wherein the first insulator is composed of a silicon oxide film and the second insulator is composed of a silicon nitride film.
17. The method of claim 15 , further comprising heat-treating the first insulator and the second insulator.
18. The method of claim 17 , wherein said heat-treating the first insulator and the second insulator includes heat-treating the first insulator and the second insulator in a nitrogen atmosphere.
19. The method of claim 15 , wherein said depositing the first insulator on the principal surface comprises adjusting a flow rate ratio of a first material gas relative to a second material gas such that the flow rate ratio is greater than or equal to a standard flow rate ratio.