Solid-State imaging device and imaging apparatus having offset optical waveguides
View Patent ↗An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
1. A solid-state imaging device comprising:
a plurality of pixels arranged in a matrix, each pixel of the plurality of pixels including a light receiving unit to perform photoelectric conversion, an optical waveguide buried in an insulating layer located above said light receiving unit, and an on-chip lens located above said optical waveguide;
a basic cell having two or more of said pixels that share a floating diffusion; and
a transistor shared by said two or more pixels in said basic cell,
wherein,
said light receiving unit is connected to said floating diffusion shared by said two or more pixels in said basic cell through a transfer gate, and
an optical waveguide of a first pixel of the basic cell is formed such that a distance from a center of the matrix of the imaging device to a center of the optical waveguide of the first pixel of the basic cell is longer than a distance from the center of the matrix of the imaging device to a center of the light receiving unit of the first pixel of the basic cell.
2. The solid-state imaging device according to claim 1 , wherein said on chip lenses of the respective pixels are arranged substantially at regular intervals.
3. The solid-state imaging device according to claim 1 , wherein
said optical waveguide includes a passivation film formed on a wall surface on the side of said insulating layer, and
a buried layer in the inside of said passivation film.
4. The solid-state imaging device according to claim 3 , wherein
said passivation film is made of silicon oxynitride.
5. The solid-state imaging device according to claim 1 , wherein an optical waveguide of a second pixel of the basic cell is formed such that a distance from the center of the matrix to a center of the optical waveguide of the second pixel of the basic cell is shorter than a distance from the center of the matrix to a center of the light receiving unit of the second pixel of the basic cell.
6. An imaging apparatus comprising:
a converging optical section that collects incident light;
a solid-state imaging device having a plurality of pixels arranged in a matrix, each pixel of the plurality of pixels including a light receiving unit to perform photoelectric conversion, an optical waveguide buried in an insulating layer located above said light receiving unit, and an on-chip lens located above said optical waveguide, said solid state imaging device further including:
a basic cell having two or more of said pixels that share a floating diffusion; and
a transistor shared by said two or more pixels in said basic cell, wherein
said light receiving unit is connected to said floating diffusion shared by said two or more pixels in said basic cell through a transfer gate, and
an optical waveguide of a first pixel of the basic cell is formed such that a distance from a center of the matrix to a center of the optical waveguide of the first pixel of the basic cell is longer than a distance from the center of the matrix to a center of the light receiving unit of the first pixel of the basic cell,
wherein,
the imaging apparatus further includes a signal processing section that processes a signal obtained by photoelectric conversion in said solid-state imaging device and said on-chip lenses are arranged substantially at regular intervals.
7. The imaging apparatus according to claim 6 , wherein
said optical waveguide includes a passivation film formed on a wall surface on the side of said insulating layer, and
a buried layer in the inside of said passivation film.
8. The imaging apparatus according to claim 7 , wherein
said passivation film is made of silicon oxynitride.
9. The imaging apparatus according to claim 6 , wherein an optical waveguide of a second pixel of the basic cell is formed such that a distance from the center of the matrix to a center of the optical waveguide of the second pixel of the basic cell is shorter than a distance from the center of the matrix to a center of the light receiving unit of the second pixel of the basic cell.