Direct cooled rotary sputtering target

1. A rotary thin film deposition target assembly comprising:

a hollow backing tube having a length, an outer surface, an outer diameter, and a plurality of perforations around the periphery of the tube and along the substantial portion of the periphery;

a tube shaped rotary deposition target having a length less than the length of the backing tube with its inner annular surface having a diameter larger than the outer diameter of the backing tube and positioned over and between the ends of the backing tube;

means for bonding the target only at one or both ends of the target; and

an annular gap of uniform depth between the backing tube and target and having a length substantially equal to the length of the perforated portion of the backing tube, the gap being in fluid communication with the interior of the backing tube through the perforations.

2. The rotary deposition target assembly of claim 1 , wherein the gap has a uniform depth of between 1 mm and 3 mm.

3. The rotary deposition target assembly of claim 1 , wherein the bonding means is applied on substantially the entire periphery of the deposition target ends and covering from between 15% and 20% of the length of the deposition target.

4. The rotary deposition target assembly of claim 1 , further comprising an annular relief reservoir recessed into at least one end of either or both the perforated backing tube on its outer surface and the deposition target on its inner surface to receive the bonding means.

5. The rotary deposition target assembly of claim 4 and further comprising two annular protruding ridges proximate at least one end of the perforated backing tube, the protruding ridges engaging the inner surface of the deposition target to define the depth of the gap and retaining the bonding means between the two ridges.

6. The rotary deposition target assembly of claim 1 , wherein said bonding means comprises a material selected from the group consisting of indium, indium-tin alloy and silver-tin alloy.

7. The rotary deposition target assembly of claim 1 , wherein said plurality of perforations comprise between 20% and 75% of the total annular surface area of the perforated backing tube between the bonded ends of the target.

8. The rotary deposition target assembly of claim 1 , wherein the perforations and gap enable a cooling fluid during use of the target assembly to flow through the gap and contact directly the entire inner surface of the deposition target between the bonded ends, and the bonding means comprises a material that provides a hermetic seal between the perforated backing tube and the rotary deposition target to retain the cooling fluid within the rotary deposition target assembly as the fluid flows through the gap.

9. The rotary deposition target assembly of claim 8 , wherein the hermetic seal is selected from the group consisting of a welded seal, a bonded seal and a gasket seal.

10. The rotary deposition target assembly of claim 1 , wherein the deposition target consists essentially of a material that is deposited on a substrate by sputtering in which the material is bombarded in a sputtering chamber with negative ions to dislodge atoms of the material from the target, and the bonding means is retained at one or both ends of the target by an annular relief reservoir or annular protruding ridges.

11. The rotary deposition target assembly of claim 3 , wherein the deposition target consists essentially of a material that is deposited on a substrate by sputtering in which the material is bombarded in a sputtering chamber with negative ions to dislodge atoms of the material from the target, and the plurality of perforations comprise between 20% and 75% of the total annular surface area of the perforated backing tube between the bonded ends of the target.

12. The rotary deposition target assembly of claim 8 , wherein the deposition target consists essentially of a material that is deposited on a substrate by sputtering in which the material is bombarded in a sputtering chamber with negative ions to dislodge atoms of the material from the target, the cooling fluid is a liquid, and the bonding means is selected from the group consisting of bismuth type materials, indium, tin and alloys of indium/tin and silver/tin.

13. The rotary deposition target assembly of claim 12 , wherein the bonding means is applied on substantially the entire periphery of the deposition target ends and covering from between 15% and 20% of the length of the deposition target, and the plurality of perforations comprise between 20% and 75% of the total annular surface area of the perforated backing tube between the bonded ends of the target.

14. A method for manufacturing a rotary deposition target comprising the steps of:

extruding a target material into a hollow cylindrical shape having an inner surface and an outer surface, then cutting the extruded material to a desired length having first and second ends to form a deposition target;

boring at least the ends of the inner surface of the target to form a smooth bonding surface;

sliding the target onto a circumferentially perforated backing tube, the perforated backing tube an outer diameter less than the inner diameter of the target material and having a length that is greater than the length of the target material, with at least the end portions of the backing tube extending beyond the target ends not being circumferentially perforated; and

affixing the target only at its ends to the perforated backing tube such that a uniform annular gap exists between the inner annular surface of the target and the outer annular surface of the backing tube along at least seventy percent of the entire length of the target.

15. The method for manufacturing a rotary deposition assembly according to claim 14 , in which the step affixing the target material to the perforated backing tube is by a hermitic seal between the perforated backing tube and the target to retain cooling fluid within the rotary deposition assembly when the assembly is in use in a deposition system.

16. A method for deposition of a thin film of a material onto a moving substrate comprising the steps of

(a) installing in a deposition chamber a rotary deposition target assembly comprising a hollow backing tube having a length, an outer surface, an outer diameter, and a plurality of perforations around the periphery of the tube and along the substantial portion of the periphery, a tube shaped rotary deposition target having a length less than the length of the backing tube with its inner annular surface having a diameter larger than the outer diameter of the backing tube and positioned over and between the ends of the backing tube, means for bonding the target only at one or both ends of the target; and an annular gap of uniform depth between the backing tube and target and having a length substantially equal to the length of the perforated portion of the backing tube, the gap being in fluid communication with the interior of the backing tube through the perforations;

(b) connecting the target assembly on at least one end of the backing tube to a fluid cooling source;

(c) rotating the target assembly in an inert atmosphere while bombarding the target with ions to detach atoms from the target and deposit them on the substrate passing under the target;

(d) flowing cooling fluid from the source into the interior of the perforated backing tube and through the plurality of perforations to directly contact the entire inner surface of the target adjacent to the gap between the perforated backing tube and the target to cool the target; and

(e) continuing the flow of the heated cooling fluid to exit the target assembly.

17. The method of claim 16 , wherein the deposition target material is selected from a group of materials in which the atoms of the material either (a) form a thin film of the material on the substrate surface, (b) treat the substrate surface to change the physical and/or chemical properties of the substrate surface, or (c) etch the substrate surface.

18. The rotary deposition target assembly of claim 1 , wherein said plurality of perforations comprise between 40% and 60% of the total annular surface area of the perforated backing tube between the bonded ends of the target.

19. The rotary deposition target assembly of claim 3 , wherein the deposition target consists essentially of a material that is deposited on a substrate by sputtering in which the material is bombarded in a sputtering chamber with negative ions to dislodge atoms of the material from the target, and the plurality of perforations comprise between 40% and 60% of the total annular surface area of the perforated backing tube between the bonded ends of the target.

20. The rotary deposition target assembly of claim 12 , wherein the bonding means is applied on substantially the entire periphery of the deposition target ends and covering from between 15% and 20% of the length of the deposition target, and the plurality of perforations comprise between 40% and 60% of the total annular surface area of the perforated backing tube between the bonded ends of the target.