Semiconductor memory device and method of controlling the same
A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.
1. A storage device comprising:
a nonvolatile semiconductor memory configured to store a plurality of first block correcting codes to respectively correct errors in a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using the first block correcting codes,
if the first error correction processing is unsuccessful, a second error correction processing is performed by using the second block correcting code, and
if the first error correction processing is successful, the second error correction processing is not performed.
2. The device according to claim 1 , further comprising:
a first corrector configured to correct errors in the first data blocks using the first block correcting codes; and
a second corrector configured to correct errors in the second data block using the second block correcting code.
3. The device according to claim 1 , wherein the nonvolatile semiconductor memory is a NAND flash memory.
4. A storage device comprising:
a nonvolatile semiconductor memory configured to store a plurality of first block correcting codes to respectively correct errors in a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using the first block correcting codes.
5. A storage device comprising:
a nonvolatile semiconductor memory configured to store each of a plurality of first block correcting codes to correct an error in each of a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using the first block correcting codes.
6. A storage device comprising:
a nonvolatile semiconductor memory configured to store each of a plurality of first block correcting codes for correcting an error in each of a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using the first block correcting codes.
7. A storage device comprising:
a nonvolatile semiconductor memory configured to store a plurality of first block correcting codes to respectively correct errors in a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using the first block correcting codes,
a second error correction processing is performed second by using the second block correcting code, an error correction capability of the second block correcting code being higher than an error correction capability of one of the first block correcting codes, and
if the first error correction processing is successful, the second error correction processing is not performed.
8. A storage device comprising:
a nonvolatile semiconductor memory configured to store a plurality of first block correcting codes to respectively correct errors in a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block,
wherein a correction capability of data is increased due to the increase in the number of errors of the data stored in the nonvolatile semiconductor memory.
9. A storage device comprising:
a nonvolatile semiconductor memory configured to store a plurality of first block correcting codes to respectively correct errors in a plurality of first data blocks, a second block correcting code to correct errors in a second data block which comprises the first data blocks, and the second data block.
10. A storage device comprising:
a nonvolatile semiconductor memory configured to store data; and
an error correction circuit configured to correct an error when reading the data stored in the nonvolatile semiconductor memory, wherein
when data is read out from the nonvolatile semiconductor memory, a first error correction processing is performed first by using a first block correcting code,
if the first error correction processing is unsuccessful, a second error correction processing is performed by using a second block correcting code, and
if the first error correction processing is successful, the second error correction processing is not performed.