IP Library Granted Patent US 9,404,175
Granted Patent B2
US 9,404,175 · App. 13/757,999 · Granted Aug 2, 2016

Method of forming a target for deposition of doped dielectric films by sputtering

Inventors: Marina Zelner (Burlington, CA); Andrew Vladimir Claude Cervin (Oakville, CA)
Assignee: BlackBerry Limited
C23C14/3414C23C14/083
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Quick Facts
Patent No.
US 9,404,175
App. No.
13/757,999
Granted
Aug 2, 2016
Kind
B2
Abstract

A system that incorporates teachings of the subject disclosure may include, for example, a method in which a selection is made for a first major constituent, a second major constituent and a minor constituent for forming a desired material. The method can include mixing the first major constituent, the second major constituent and the minor constituent in a single mixing step to provide a mixture of constituents. The method can include drying the mixture of constituents to provide a dried mixture of constituents and calcining the dried mixture of constituents to provide a calcinated mixture of constituents. The method can include processing the calcinated mixture of constituents to provide a powder of constituents. Other embodiments are disclosed.

Claims (33)

1. A method, comprising:

selecting a first major constituent, a second major constituent and at least one minor constituent, wherein the first major constituent is Ta 2 O 5 , wherein the second major constituent is one of BaCO 3 or Pb(CH 3 COO) 2 , and wherein the minor constituent is selected from a group consisting of a nanopowder, a gel, an alkoxide or combinations thereof;

forming a mixture of constituents consisting essentially of the first major constituent, the second major constituent and the minor constituent in a single mixing step;

drying the mixture of constituents to provide a dried mixture of constituents;

calcining the dried mixture of constituents to provide a fully reacted mixture of constituents;

pulverizing and separating the reacted mixture of constituents to provide a powder of constituents;

hot-pressing the powder of constituents to form a target; and

performing physical vapor deposition using the target to form a multicomponent dielectric thin film,

wherein the physical vapor deposition is performed at a deposition rate between nine nanometers per minute and eighteen nanometers per minute, and wherein the target has a density of at least 99%.

2. The method of claim 1 , wherein the second major constituent is Pb(CH 3 COO) 2 .

3. The method of claim 1 , wherein the calcining is performed within 100 C of the temperature of solid state reaction of the constituents.

4. The method of claim 1 , wherein the second major constituent is BaCO 3 .

5. The method of claim 1 , wherein the nanopowder is selected from a group consisting essentially of a rare-earth metal oxide nanopowder, a hydroxide nanopowder, a titanate nanopowder, a zirconate nanopowder, a niobate nanopowder or combinations thereof, and wherein the alkoxide is selected from a group consisting essentially of magnesium ethoxide, aluminum isopropoxide, rare-earth alkoxide, hydroxyacetate, hydroxyoxalate, hydroxypropionate and combinations thereof.

6. A method, comprising:

selecting a first major constituent, a second major constituent and at least one minor constituent, wherein the first major constituent is ZrO 2 , wherein the second major constituent is one of BaCO 3 or Pb(CH 3 COO) 2 , and wherein the minor constituent selected from a group consisting of a nanopowder, a gel, an alkoxide or combinations thereof;

forming a mixture of constituents consisting essentially of the first major constituent, the second major constituent and the minor constituent in a single mixing step;

drying the mixture of constituents to provide a dried mixture of constituents;

calcining the dried mixture of constituents to provide a fully reacted mixture of constituents;

pulverizing and separating the reacted mixture of constituents to provide a powder of constituents;

hot-pressing the powder of constituents to form a target; and

performing physical vapor deposition using the target to form a multicomponent dielectric thin film,

wherein the physical vapor deposition is performed at a deposition rate of at least twelve nanometers per minute, and wherein the target has a density of at least 99%.

7. The method of claim 6 , wherein the second major constituent is BaCO 3 .

8. The method of claim 6 , wherein the calcining is performed within 100 C of the temperature of solid state reaction of the constituents.

9. The method of claim 6 , wherein the second major constituent is Pb(CH 3 COO) 2 .

10. The method of claim 6 , wherein the nanopowder is selected from a group consisting essentially of a rare-earth metal oxide nanopowder, a hydroxide nanopowder, a titanate nanopowder, a zirconate nanopowder, a niobate nanopowder or combinations thereof, and wherein the alkoxide is selected from a group consisting essentially of magnesium ethoxide, aluminum isopropoxide, rare-earth alkoxide, hydroxyacetate, hydroxyoxalate, hydroxypropionate and combinations thereof.

11. A method, comprising:

selecting a first major constituent, a second major constituent and at least one minor constituent, wherein the first major constituent is selected from a group consisting of TiO 2 , Ta 2 O 5 , or ZrO 2 , wherein the second major constituent is one of BaCO 3 or Pb(CH 3 COO) 2 , and wherein the minor constituent is selected from a group consisting of a nanopowder, a gel, an alkoxide or combinations thereof;

forming a mixture of constituents consisting essentially of the first major constituent, the second major constituent and the minor constituent in a single mixing step;

drying the mixture of constituents to provide a dried mixture of constituents;

calcining the dried mixture of constituents to provide a fully reacted mixture of constituents; and

pulverizing and separating the reacted mixture of constituents to provide a powder of constituents.

12. The method of claim 11 , wherein the second major constituent is Pb(CH 3 COO) 2 .

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2014
From: BLACKBERRY RF, INC.
To: BLACKBERRY CORPORATION
Reel/Frame 033867/0813 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2014
From: BLACKBERRY CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 033867/0839 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2013
From: ZELNER, MARINA; CERVIN, ANDREW VLADIMIR CLAUDE
To: BLACKBERRY RF, INC.
Reel/Frame 031472/0118 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 030909/0908 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 030909/0933 →
Continuity (1)
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