IP Library Granted Patent US 9,000,841
Granted Patent B2
US 9,000,841 · App. 13/758,895 · Granted Apr 7, 2015

Method, system, and apparatus for RF switching amplifier

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,000,841
App. No.
13/758,895
Granted
Apr 7, 2015
Kind
B2
Abstract

Embodiments of RF switching amplifiers are described generally herein. Other embodiments may be described and claimed.

Claims (33)

1. An apparatus for amplifying an RF modulated signal for transmission on a network having micro-burst transmission slots and having a minimum noise floor, including:

a signal encoder and control signal generation module for receiving a signal to be transmitted on an RF network and generating a digitally encoded signal and an RF signal amplification gain signal;

an RF modulator for receiving and modulating the digitally encoded signal for one or more RF channels or frequencies, thereby obtaining an RF modulated signal;

a control signal module for receiving the RF signal amplification gain signal and for generating a first RF pre-amplifier gain signal and a first RF amplifier gain signal;

a pre-amplifier control module for receiving the first RF pre-amplifier gain signal and generating a bias signal and a second RF pre-amplifier gain signal based on the received first RF pre-amplifier gain signal;

a pre-amplifier module for receiving the RF modulated signal and the second RF pre-amplifier gain signal and generating a pre-amplified RF modulated signal;

an amplifier control module for receiving the first RF amplifier gain signal and the bias signal and generating a second RF amplifier gain signal; and

an amplifier module for receiving the second RF amplifier gain signal and the pre-amplified RF modulated signal and generating an RF amplified signal,

wherein

the control signal module, the pre-amplifier control module and the pre-amplifier module have a first noise floor outside a specific transmission slot,

the amplifier control module and the amplifier module have a second noise floor outside the specific transmission slot, and

the second noise floor is greater than the first noise floor and the first noise floor is less than a minimum noise floor.

2. The apparatus of claim 1 , wherein the RF network is a cellular, satellite or local network.

3. The apparatus of claim 1 , wherein the control signal module comprises:

a first summer for summing the RF signal amplification gain signal and a first summing bias to generate the first RF pre-amplifier gain signal, and

a second summer for summing the RF signal amplification gain signal and a second summing bias to generate the first RF amplifier gain signal.

4. The apparatus of claim 1 , wherein the pre-amplifier gain control module comprises:

an operational amplifier for receiving the first RF pre-amplifier gain signal;

a p-type complementary metal-oxide semiconductor (p-CMOS) transistor connected to the output of the operational amplifier; and

a first resistor, a second resistor and a capacitor connected in series,

wherein

one input of the operational amplifier is connected between the first resistor and the second resistor, and

the p-CMOS transistor is connected to the pre-amplifier module.

5. The apparatus of claim 1 , wherein the pre-amplifier module comprises a multiple stage amplifier.

6. The apparatus of claim 1 , wherein the amplifier control module comprises:

an operational amplifier for receiving the first RF amplifier gain signal;

a p-type complementary metal-oxide semiconductor (p-CMOS) transistor connected to the output of the operational amplifier;

a first resistor, a second resistor and a capacitor connected in series; and

an inductor connected to the p-CMOS transistor,

wherein

one input of the operational amplifier is connected between the first resistor and the second resistor, and

the inductor is connected to the amplifier module.

7. The apparatus of claim 1 , wherein the amplifier module comprises an n-type complementary metal-oxide semiconductor (n-CMOS) transistor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2025
From: SHARMA, VIKAS; ADAMSKI, JAROSLAW; CALANCA, NEIL; BROUGHTON, ROBERT
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 070546/0831 →
CHANGE OF NAME Recorded Jan 24, 2018
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 045749/0391 →