Semiconductor device and manufacturing method thereof
Provided is a semiconductor device which allows an alignment mark used for the manufacturing of a solid-state image sensor (semiconductor device) having a back-side-illumination structure to be formed in a smaller number of steps. The semiconductor device includes a semiconductor layer having a first main surface and a second main surface opposing the first main surface, a plurality of photodiodes which are formed in the semiconductor layer and in each of which photoelectric conversion is performed, a light receiving lens disposed over the second main surface of the semiconductor layer to supply light to each of the photodiodes, and a mark for alignment formed inside the semiconductor layer. The mark for alignment is formed so as to extend from the first main surface toward the second main surface and have a protruding portion protruding from the second main surface in a direction toward where the light receiving lens is disposed.
1. A semiconductor device, comprising:
a supporting substrate;
a semiconductor layer disposed over the support substrate and including a first main surface and a second main surface opposing the first main surface;
a plurality of light receiving elements which are formed in the semiconductor layer and in each of which photoelectric conversion is performed;
a light receiving lens disposed over the second main surface of the semiconductor layer to supply light to each of the light receiving elements; and
a mark for alignment formed inside the semiconductor layer,
wherein the mark for alignment extends from the first main surface toward the second main surface,
wherein the mark for alignment includes a protruding portion formed so as to protrude from the second main surface in a direction toward where the light receiving lens is disposed,
wherein a bottom surface of the mark is coplanar with the first main surface of the semiconductor layer, and
wherein the mark is made of a same material as the semiconductor layer and is in direct contact with the semiconductor layer.
2. A semiconductor device according to claim 1 ,
wherein the mark for alignment is formed in a peripheral portion of the semiconductor layer in planar view.
3. A semiconductor device according to claim 1 , wherein the same material includes silicon.
4. A semiconductor device according to claim 1 , further comprising:
an oxide layer having a first main surface and a second main surface; and
a color filter disposed on the second main surface of the oxide layer, wherein:
the first main surface of the oxide layer is coplanar with the second main surface of the semiconductor layer,
the protruding portion protrudes from the second main surface of the semiconductor layer to reach the second main surface of the oxide layer.