Stud bump structure and method for manufacturing the same
A stud bump structure and method for manufacturing the same are provided. The stud bump structure includes a substrate, and a first silver alloy stud bump disposed on the substrate, wherein the first silver alloy stud bump has a weight percentage ratio of Ag:Au:Pd=60-99.98:0.01-30:0.01-10.
1. A stud bump structure, comprising
a first substrate; and
a first silver alloy stud bump disposed on the first substrate and assembled to a second substrate, wherein the first silver alloy stud bump is composed of Ag, Au, and Pd and has a weight percentage ratio of Ag:Au:Pd=89.99-97.99:0.01:2-10,
wherein the first substrate comprises a wafer and the second substrate comprises a wafer or a printed circuit board.
2. The stud bump structure as claimed in claim 1 , further comprising a bonding pad on the first substrate, wherein the first silver alloy stud bump is disposed on the bonding pad.
3. The stud bump structure as claimed in claim 1 , further comprising a second silver alloy stud bump disposed on the first silver alloy stud bump.
4. The stud bump structure as claimed in claim 3 , wherein a diameter and a height of the second silver alloy stud bump is between 20 μm and 100 μm.
5. The stud bump structure as claimed in claim 3 , wherein the second silver alloy stud bump and the first silver alloy stud bump have the same composition.
6. The stud bump structure as claimed in claim 1 , wherein a diameter and a height of the first silver alloy stud bump is between 20 μm and 100 μm.
7. A method for manufacturing a stud bump structure as claimed in claim 1 , comprising
providing a silver alloy wire;
melting an end of the silver alloy wire to form a first free air ball;
bonding the first free air ball onto a first substrate to form a first ball bond;
cutting off the silver alloy wire, such that the first ball bond is left on the first substrate to form a first silver alloy stud bump, wherein the first silver alloy stud bump is composed of Ag, Au, and Pd and has a weight percentage ratio of Ag:Au:Pd=89.99-97.99:0.01:2-10; and
assembling the first silver alloy stud bump to a second substrate,
wherein the first substrate comprises a wafer and the second substrate comprises a wafer or a printed circuit board.
8. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein a wire diameter of the silver alloy wire is between 10 μm and 50 μm.
9. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein the first free air ball is bonded onto the first substrate to form a first ball bond by hot pressing or ultrasonic hot pressing.
10. The method for manufacturing a stud bump structure as claimed in claim 7 , further comprising a bonding pad on the first substrate, wherein the first free air ball is disposed on the bonding pad.
11. The method for manufacturing a stud bump structure as claimed in claim 7 , further comprising
melting an end of the silver alloy wire again to form a second free air ball;
bonding the second free air ball onto the first silver alloy stud bump to form a second ball bond; and
cutting off the silver alloy wire, such that the second ball bond is left on the first silver alloy stud bump to form a second silver alloy stud bump.
12. The method for manufacturing a stud bump structure as claimed in claim 11 , wherein a diameter and a height of the second silver alloy stud bump is between 20 μm and 100 μm.
13. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein a diameter and a height of the first silver alloy stud bump is between 20 μm and 100 μm.