Epitaxial growth device
An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.
1. An epitaxial growth device comprising:
a reaction chamber defined by a susceptor configured to support a substrate during processing;
a ring-like support portion having a through-hole as viewed from above, the ring-like support portion having an inner wall comprising two inclined opposing face portions, each of which taper gradually toward the susceptor;
a ceiling board which is transmissive to light disposed on the inner wall of the ring-like support portion, the ceiling board defining a height between the susceptor and the ceiling board that is substantially equal across a width of the susceptor;
a heating unit located outside of the reaction chamber for heating a substrate set inside of the reaction chamber via the ceiling board; and
a reactant gas-introduction unit for introducing a reactant gas into the reaction chamber in a direction parallel to a horizontal direction of the substrate, wherein a susceptor ring is provided outside a periphery of a substrate setting portion of the susceptor, the susceptor ring comprising a first ring and a second ring, the first ring located outside the periphery of the substrate setting portion and supported by a sidewall portion of the reaction chamber, the second ring set on a circular step having a recessed surface, the circular step provided within an inner circumference of the first ring.
2. The epitaxial growth device according to claim 1 , wherein a distance between a center of the ceiling board and a substrate setting portion of the susceptor is less than 10 mm.
3. The epitaxial growth device according to claim 1 , wherein the sidewall portion of the reaction chamber has a supply passage for supplying the reactant gas into the reaction chamber, the supply passage has a wall against which the reactant gas introduced from the reactant gas-introduction unit collides, and a plurality of rectification grooves are provided in end portions of the wall along a flow direction of the reactant gas.
4. The epitaxial growth device according to claim 3 , wherein the rectification grooves are positioned to face a plurality of holes of a rectification plate provided in a line in a longitudinal direction, the rectification plate being provided at an upstream side of the supply passage.
5. The epitaxial growth device according to claim 4 , wherein the holes provided in the line are formed in a plurality of areas in the rectification plate, and the rectification grooves are provided corresponding to a plurality of holes located in both of a plurality of outmost end areas of the plurality of areas.
6. The epitaxial growth device according to claim 3 , wherein a plurality of centers of the respective grooves are positioned to face toward a center of the sidewall portion having a ring-like shape.
7. The epitaxial growth device according to claim 1 , wherein the second ring is provided to approach a space formed between the susceptor and the first ring.
8. The epitaxial growth device according to claim 1 , wherein the second ring is provided to cover a space formed between the susceptor and the first ring.
9. An epitaxial growth device comprising:
a reaction chamber defined by a sidewall portion and a bottom;
a susceptor within the sidewall portion, the susceptor having a substrate setting portion configured to support a substrate during processing, wherein a susceptor ring is provided outside a periphery of a substrate setting portion of the susceptor and within the sidewall portion, the susceptor ring comprising a first ring and a second ring, the first ring located outside the periphery of the substrate setting portion and supported by the sidewall portion, the second ring set on a circular step having a recessed surface, the circular step provided within an inner circumference of the first ring;
a ring-like support portion provided on the sidewall portion defining a circular through-hole as viewed from above, the through-hole having an inner wall with two opposing inclined face portions, each of which taper gradually toward the substrate support portion;
a light-transmissive ceiling board disposed on the inner wall of the ring-like support portion, the ceiling board defining a height between the susceptor and the ceiling board that is substantially equal across a width of the susceptor;
a first heating unit located outside of the reaction chamber for heating a substrate inside of the reaction chamber via the ceiling board;
a second heating unit located outside of the reaction chamber for heating the substrate inside of the reaction chamber via the bottom; and
a reactant gas-introduction supply passage provided in the sidewall portion for introducing a reactant gas into the reaction chamber in a direction parallel to a plane of the substrate setting portion.
10. The epitaxial growth device according to claim 9 , wherein the supply passage has a wall against which the reactant gas introduced from the reactant gas-introduction unit collides.
11. The epitaxial growth device according to claim 10 , wherein a plurality of rectification grooves are provided in end portions of the wall along a flow direction of the reactant gas.
12. The epitaxial growth device according to claim 9 , wherein the reactant gas-introduction supply passage includes a rectification plate located in a flow path of the reactant gas.
13. The epitaxial growth device according to claim 12 , wherein the rectification plate includes a plurality of holes positioned about a circumference of the susceptor.
14. The epitaxial growth device according to claim 9 , wherein an exhaust passage is provided in the sidewall portion opposite the reactant gas-introduction supply passage.
15. An epitaxial growth device comprising:
a reaction chamber defined by a ring-like upper sidewall portion, a ring-like lower sidewall portion, and a bottom;
a susceptor within the reaction chamber, the susceptor having a substrate setting portion configured to support a substrate during processing, wherein a susceptor ring is provided outside a periphery of a substrate setting portion of the susceptor and within the ring-like lower sidewall portion, the susceptor ring comprising a first ring and a second ring, the first ring located outside the periphery of the substrate setting portion and supported by the ring-like lower sidewall portion, the second ring set on a recessed circular step provided within an inner circumference of the first ring;
a support portion disposed within the ring-like upper sidewall portion defining a circular through-hole as viewed from above, the support portion having two opposing inclined face portions that reduce gradually toward the substrate support portion;
a light-transmissive ceiling board disposed on one of the two opposing inclined face portions of the ring-like support portion, the ceiling board defining a height between the susceptor and the ceiling board that is substantially equal across a width of the susceptor;
a first heating unit located outside of the reaction chamber for heating a substrate inside of the reaction chamber via the ceiling board;
a second heating unit located outside of the reaction chamber for heating the substrate inside of the reaction chamber via the bottom;
a reactant gas-introduction supply passage provided in the ring-like lower sidewall portion for introducing a reactant gas into the reaction chamber in a direction parallel to a first plane of the substrate setting portion, wherein the reactant gas-introduction supply passage comprises a first supply passage disposed parallel to the first plane, and a second supply passage disposed in a second plane that is perpendicular to the first plane, wherein the ceiling board has a surface that is substantially coplanar with the first supply passage; and
an exhaust passage is provided in the ring-like lower sidewall portion opposite the reactant gas-introduction supply passage.
16. The epitaxial growth device according to claim 14 , wherein the reactant gas-introduction supply passage includes a rectification plate located in a flow path of the reactant gas.
17. The epitaxial growth device according to claim 16 , wherein the rectification plate includes a plurality of holes positioned about a circumference of the susceptor.
18. The epitaxial growth device according to claim 14 , wherein the supply passage has a wall against which the reactant gas introduced from the reactant gas-introduction unit collides.
19. The epitaxial growth device according to claim 18 , wherein a plurality of rectification grooves are provided in end portions of the wall along a flow direction of the reactant gas.
20. The epitaxial growth device according to claim 1 , wherein the reactant gas-introduction supply passage comprises a plurality of first supply passages disposed parallel to the first plane, and a plurality of second supply passages disposed in a second plane that is perpendicular to the first plane, and each of the second supply passages comprise an arc-like shape that elongates in the second plane.