Block co-polymer photoresist
An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
1. A method of making an integrated circuit comprising:
depositing a pinning layer on a substrate;
forming a block copolymer photoresist on the pinning layer;
wherein the formed block copolymer photoresist comprises first and second blocks A and B that do not self-assemble under at least some annealing conditions;
projecting a light pattern onto the block copolymer photoresist thereby exposing at least a selected region of the block copolymer photoresist and the pinning layer with actinic radiation, the actinic radiation inducing chemical changes in the pinning layer and the block copolymer;
the actinic radiation changing block A to a different block A′ in the block copolymer;
annealing the wafer under said at least some annealing conditions such that A′ and B self-assemble to thereby form regions of A′ in contact with the exposed region of the pinning layer;
developing the block copolymer photoresist; and
further processing said substrate to make an integrated circuit.
2. The method of claim 1 wherein said actinic radiation is 193 nm radiation.
3. The method of claim 1 wherein said actinic radiation is EUV radiation.
4. The method of claim 1 further including processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected region.
5. The method of claim 1 further including processing the exposed pinning layer to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
6. An integrated circuit device made by a process including:
depositing a pinning layer on a substrate;
forming a block copolymer photoresist on the pinning layer;
wherein the block copolymer comprises first and second blocks A and B that do not self-assemble under at least some annealing conditions;
projecting a light pattern onto the block copolymer photoresist thereby exposing at least a selected region of the block copolymer photoresist and the pinning layer with actinic radiation, the actinic radiation inducing chemical changes in the pinning layer and the block copolymer, the actinic radiation changing block A to a different block A′ in the block copolymer;
annealing the wafer under said at least some annealing conditions such that A′ and B self-assemble to thereby form regions of A′ in contact with the exposed region of the pinning layer;
developing the block copolymer photoresist; and
further processing said substrate to form integrated circuitry thereon.
7. The integrated circuit of claim 6 wherein said actinic radiation is 193 nm radiation.
8. The integrated circuit of claim 6 wherein said actinic radiation is EUV radiation.
9. The integrated circuit of claim 6 wherein the process further includes processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected region.
10. The integrated circuit of claim 6 wherein the process further includes processing the exposed pinning layer to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
11. A method of forming a pattern comprising:
depositing a pinning layer on a substrate;
forming a block copolymer photoresist on the pinning layer;
wherein the formed block copolymer photoresist comprises first and second blocks A and B that do not self-assemble under at least some annealing conditions;
projecting a light pattern onto the block copolymer photoresist thereby exposing at least a selected region of the block copolymer photoresist and the pinning layer with actinic radiation, the actinic radiation inducing chemical changes in the pinning layer and the block copolymer, the actinic radiation changing block A to a different block A′ in the block copolymer;
annealing the wafer under said at least some annealing conditions such that A′ and B self-assemble to thereby form regions of A′ in contact with the exposed region of the pinning layer; and
developing the block copolymer photoresist.
12. The method of claim 11 further including processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected region.
13. The method of claim 11 further including processing the exposed pinning layer to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.