Tubular thermoelectric module and method for producing the module
View Patent ↗A method for producing a thermoelectric module and a tubular thermoelectric module include at least an inner tube, an outer tube and an interspace therebetween. At least a plurality of rings each formed by a plurality of n-doped and p-doped semiconductor elements disposed alternately in a circumferential direction are disposed in succession in an axial direction of the thermoelectric module in the interspace. On an inner side or an outer side of the semiconductor elements of one ring, electrically conductive first connections run only in the circumferential direction and, on an opposite outer side or inner side, at least one electrically conductive second connection electrically conductively connects an n-doped to a p-doped semiconductor element of an adjacent ring and runs at least in the axial direction of the thermoelectric module.
1. A method for producing a thermoelectric module, the method comprising the following steps:
a) providing an inner tube;
b) providing an outer tube;
c) placing semiconductor elements, having a length in axial direction, between the inner tube and the outer tube;
d) connecting the inner tube, the outer tube and the semiconductor elements; and
e) introducing at least one separating location at least into the outer tube and into the semiconductor elements, the at least one separating location subdividing the outer tube and subdividing the length of the semiconductor elements into at least two sections by:
cutting in a circumferential direction through the outer tube and the semiconductor elements and in an axial direction along gaps between the semiconductor elements;
creating electrical conductive paths on the outside of the semiconductor elements;
cutting the semiconductor elements only in the circumferential direction creating rings of thermoelectric elements;
electrically interconnecting the semiconductor elements in the circumferential direction; and
electrically interconnecting neighboring rings at least in one position.
2. The method according to claim 1 , wherein each of the semiconductor elements is a p-doped or n-doped semiconductor element.