Amorphous spacerlattice spacer for perpendicular MTJs
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
1. A perpendicular magnetic tunnel junction (MTJ) apparatus comprising:
a tunnel barrier layer deposited between a free layer and a reference layer;
a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layer, the TMR enhancement buffer layer comprising a bcc (001) structure; and
a non-magnetic amorphous superlattice TMR enhancement spacer deposited between the TMR enhancement buffer layer and the reference layer, in which the non-magnetic amorphous superlattice TMR enhancement spacer is arranged to block a template effect from a synthetic antiferromagnetic (SAF) layer and in which a center layer of the superlattice TMR enhancement spacer is thicker than outer layers of the superlattice TMR enhancement spacer.
2. The apparatus of claim 1 in which the non-magnetic amorphous superlattice TMR enhancement spacer comprises:
a superlattice of Fe/Ta, Co/Ta, FeB/Ta, Fe/TaN and/or FeB/TaN.
3. The apparatus of claim 1 in which the non-magnetic TMR enhancement spacer is between about 4 Å and about 20 Å thick.
4. The apparatus of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
5. A method for constructing a perpendicular magnetic tunnel junction (MTJ) apparatus, comprising:
depositing a tunnel barrier layer between a free layer and a reference layer;
depositing a tunnel magnetoresistance (TMR) enhancement buffer layer between the tunnel barrier layer and the reference layer, the TMR enhancement buffer layer comprising a bcc (001) structure; and
depositing a non-magnetic amorphous superlattice TMR enhancement spacer between the TMR enhancement buffer layer and the reference layer, in which a thickness of the non-magnetic amorphous superlattice TMR enhancement spacer is selected to block a template effect from a synthetic antiferromagnetic (SAF) layer and in which a center layer of the of the superlattice TMR enhancement spacer is thicker than outer layers of the superlattice TMR enhancement spacer.
6. The method of claim 5 , further comprising:
depositing a superlattice of Fe/Ta, Co/Ta, FeB/Ta, Fe/Tan and/or FeB/Tan between the TMR enhancement buffer layer and the reference layer.
7. The method of claim 5 , further comprising:
depositing the non-magnetic amorphous TMR enhancement spacer with a thickness of 4 Å about 20 Å.
8. The method of claim 5 , further comprising integrating the perpendicular MTJ apparatus into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
9. A method for constructing a perpendicular magnetic tunnel junction (MTJ) apparatus, comprising steps of:
depositing a tunnel barrier layer between a free layer and a reference layer;
depositing a tunnel magnetoresistance (TMR) enhancement buffer layer between the tunnel barrier layer and the reference layer, the TMR enhancement buffer layer comprising a bcc (001) structure; and
depositing a non-magnetic amorphous superlattice TMR enhancement spacer between the TMR enhancement buffer layer and the reference layer, in which a thickness of the superlattice TMR enhancement spacer is selected to block a template effect from a synthetic antiferromagnetic (SAF) layer and in which a center layer of the of the superlattice TMR enhancement spacer is thicker than outer layers of the superlattice TMR enhancement spacer.
10. The method of claim 9 , further comprising the step of integrating the perpendicular MTJ apparatus into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.