Conductive film substrate, photovoltaic cell having the same, and method of manufacturing the same

1. A method of manufacturing a conductive film substrate comprising:

preparing the base substrate; and

forming the transparent conductive film on the base substrate,

wherein the transparent conductive film is a zinc oxide thin film which has first texture structures and second texture structures, the second texture structures being smaller than the first texture structures,

wherein forming the transparent conductive film comprises concurrently forming the first texture structures and the second texture structures on a surface of the zinc oxide thin film,

wherein the transparent conductive film is formed by atmospheric pressure chemical vapor deposition,

wherein the atmospheric pressure chemical vapor deposition comprises:

loading the base substrate into a chamber;

heating the loaded base substrate; and

feeding a zinc precursor and an oxidizer gas into the chamber, a molar ratio of the zinc precursor to the oxidizer gas ranging from 1:12 to 1:28,

wherein a distribution density of the first texture structures ranges from 2/μm 2 to 20/μm 2 and a distribution density of the second texture structures ranges from 50/μm 2 to 500/μm 2 .

2. The method of claim 1 , wherein feeding the zinc precursor and the oxidizer gas comprises feeding the zinc precursor at a rate ranging from 0.001552 mol/min to 0.002328 mol/min and the oxidizer gas at a rate ranging from 0.5 g/min to 1 g/min.

3. The method of claim 1 , wherein the zinc precursor comprises one selected from the group consisting of diethylzinc, dimethylzinc and a mixture thereof.

4. The method of claim 1 , wherein the oxidizer gas comprises at least one substance selected from the group consisting of H 2 O, ethanol, methanol, butanol, propanol and isopropanol.

5. The method of claim 1 , wherein heating the loaded base substrate comprises heating the loaded base substrate in a temperature ranging from 350° C. to 550° C.

6. The method of claim 1 , wherein feeding the zinc precursor and the oxidizer gas comprises additionally feeding at least one sort of dopant selected from the group consisting of Al, Ga, B, In and F.

7. The method of claim 6 , wherein the dopant is added in an amount of 7 wt % or less of a content of zinc oxide.

8. The method of claim 1 , wherein the first texture structures have a length ratio of a short axis to a long axis ranging from 0.15 to 0.70 when viewed perpendicularly from above the base substrate.

9. The method of claim 1 , wherein a length of each long axis of the first texture structures ranges from 200 nm to 500 nm and a length of each short axis of the first texture structures ranges from 80 nm to 200 nm when viewed perpendicularly from above the base substrate.

10. The method of claim 1 , wherein the first texture structures have a hexagonal shape when viewed perpendicularly from above the base substrate.

11. The method of claim 1 , wherein a length of each axis of the second texture structures ranges from 30 nm to 150nm when viewed perpendicularly from above the base substrate.