Large emission area light-emitting devices
Light-emitting devices, and related components, systems and methods are disclosed.
1. A light-emitting device, comprising:
a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially.
2. The light-emitting device of claim 1 , wherein the multi-layer stack further comprises a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material.
3. The light-emitting device of claim 1 , wherein the at least one gallium nitride semiconductor material comprises GaN.
4. The light-emitting device of claim 1 , wherein the at least one gallium nitride semiconductor material comprises AlGaN.
5. The light-emitting device of claim 1 , further comprising electrical contacts configured to inject current into the light-emitting device.
6. The light-emitting device of claim 5 , wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.
7. The light-emitting device of claim 1 , wherein the first layer comprises a semiconductor material.
8. The light-emitting device of claim 1 , wherein the surface of the first layer includes a portion that is parallel to a surface of the light-generating region.
9. A light-emitting device comprising:
a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially; and
a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, wherein the layer of reflective material is positioned on an opposite side of the light-generating region as the first layer.
10. A light-emitting device, further comprising:
a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially; and
a layer including phosphor disposed over the surface of the first layer.
11. The light-emitting device of claim 10 , wherein the layer including phosphor is substantially uniformly disposed over the surface of the first layer.
12. The light-emitting device of claim 10 , further comprising a layer including a material that is substantially transparent to light that emerges from the light-emitting device, wherein the layer including the material that is substantially transparent is disposed adjacent the layer including phosphor.
13. A light-emitting device comprising:
a multi-layer stack comprising at least one gallium nitride semiconductor material, the multi-layer stack including a light-generating region and a first layer supported by the light-generating region, the first layer including a surface that is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially, wherein the first layer comprises a layer of n-doped gallium nitride semiconductor material, and the multi-layer stack further comprises a layer of p-doped III-V semiconductor material.