Semiconducting compounds and related compositions and devices

1. A compound having formula I:

wherein:

W 1 and W 2 independently are —(CR c R d ) m — or —(SiR e R f )—;

X and X′ are selected from the group consisting of S, O, NR a and CR b , provided that one of X and X′ is selected from the group consisting of S, O, and NR a , and the other X and X′ is CR b ;

Y and Y′ are selected from the group consisting of S, O, NR a′ and CR b′ , provided that one of Y and Y′ is selected from the group consisting of S, O, and NR a′ , and the other Y and Y′ is CR b′ ;

Z 1 and Z 2 independently are selected from the group consisting of O, S, —C≡C—, and a covalent bond;

R a and R a ′ independently are selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group;

R b and R b ′ independently are selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group;

R c and R d independently are selected from the group consisting of H, a C 1-20 alkyl group, and a C 1-20 haloalkyl group;

R e and R f independently are selected from the group consisting of H, a C 1-20 alkyl group, and a C 1-20 haloalkyl group;

R 1 , R 1 ′, R 2 , and R 2 ′ independently are selected from the group consisting of a linear C 1-40 alkyl group, a linear C 2-40 alkenyl group, and a linear C 1-40 haloalkyl group; and

m, at each occurrence, independently is 0, 1, 2, 3, or 4.

2. The compound of claim 1 , wherein the compound has the formula IIa or IIIa:

wherein R 1 , R 1 ′, R 2 , R 2 ′, Z 1 , Z 2 , and m are as defined in claim 1 .

3. The compound of claim 1 , wherein the compound has the formula IVa or Va:

wherein R 1 , R 1 ′, R 2 , R 2 ′, Z 1 , Z 2 , and m are as defined in claim 1 .

4. The compound of claim 2 , wherein Z 1 and Z 2 independently are O or a covalent bond.

5. The compound of claim 2 , wherein each m independently is 0, 1, or 2.

6. The compound of claim 2 , wherein R 1 and R 2 independently are selected from the group consisting of a linear C 3-40 alkyl group, a linear C 4-40 alkenyl group, and a linear C 3-40 haloalkyl group; and R 1 ′ and R 2 ′ independently are selected from the group consisting of CH 3 , CF 3 , C 2 H 5 , C 2 F 5 , CH 2 CF 3 , CF 2 CH 3 , CH 2 CH 2 CH 3 , CF 2 CF 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 CH 2 CH 2 CH 3 , CF 2 CF 2 CF 2 CF 3 , and CH 2 CH 2 CH 2 CF 3 .

7. The compound of claim 1 , wherein the compound has the formula IIb or IIIb:

wherein R 1 and R 2 independently are selected from the group consisting of a linear C 3-40 alkyl group, a linear C 4-40 alkenyl group, and a linear C 3-40 haloalkyl group; R 1 ′ and R 2 ′ independently are selected from the group consisting of CH 3 , CF 3 , C 2 H 5 , C 2 F 5 , CH 2 CF 3 , CF 2 CH 3 , CH 2 CH 2 CH 3 , CF 2 CF 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 CH 2 CH 2 CH 3 , CF 2 CF 2 CF 2 CF 3 , and CH 2 CH 2 CH 2 CF 3 ; and m 1 and m 2 independently are 0, 1, or 2.

8. The compound of claim 1 , wherein the compound has the formula IVb or Vb:

wherein R 1 and R 2 independently are selected from the group consisting of a linear C 3-40 alkyl group, a linear C 4-40 alkenyl group, and a linear C 3-40 haloalkyl group; R 1 ′ and R 2 ′ independently are selected from the group consisting of CH 3 , CF 3 , C 2 H 5 , C 2 F 5 , CH 2 CF 3 , CF 2 CH 3 , CH 2 CH 2 CH 3 , CF 2 CF 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 CH 2 CH 2 CH 3 , CF 2 CF 2 CF 2 CF 3 , and CH 2 CH 2 CH 2 CF 3 ; and m 1 and m 2 independently are 0, 1, or 2.

9. The compound of claim 1 , wherein the compound has the formula IIc, IIIc, IVc, or Vc:

wherein R 1 and R 2 independently are selected from the group consisting of a linear C 3-40 alkyl group, a linear C 4-40 alkenyl group, and a linear C 3-40 haloalkyl group; R 1 ′ and R 2 ′ independently are selected from the group consisting of CH 3 , CF 3 , C 2 H 5 , C 2 F 5 , CH 2 CF 3 , CF 2 CH 3 , CH 2 CH 2 CH 3 , CF 2 CF 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 CH 2 CH 2 CH 3 , CF 2 CF 2 CF 2 CF 3 , and CH 2 CH 2 CH 2 CF 3 ; and m 1 and m 2 independently are 0, 1, or 2.

10. A compound having formula VI:

wherein:

X and X′ are selected from the group consisting of S, O, NR a and CR b , provided that one of X and X′ is selected from the group consisting of S, O, and NR a , and the other X and X′ is CR b ;

Y and Y′ are selected from the group consisting of S, O, NR a′ and CR b′ , provided that one of Y and Y′ is selected from the group consisting of S, O, and NR a′ , and the other Y and Y′ is CR b′ ;

Z 3 and Z 4 independently are selected from the group consisting of O, S, and —C≡C—;

R a and R a ′ independently are selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group;

R b and R b ′ independently are selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group; and

R 3 and R 4 independently are selected from the group consisting of a linear or branched C 1-40 alkyl group, a linear or branched C 2-40 alkenyl group, a linear or branched C 2-40 alkynyl group, a linear or branched C 1-40 haloalkyl group, and a Si(C 1-40 alkyl) 3 group.

11. The compound of claim 10 , wherein the compound has the formula VII or VIII:

wherein R 3 and R 4 are as defined in claim 10 .

12. A compound having formula IX, X, XI, or XII:

wherein:

Z 5 and Z 6 independently are selected from the group consisting of O, S, —C≡C—, and a covalent bond;

Z 7 and Z 8 independently are selected from the group consisting of O, S, —C≡C—, and a covalent bond;

R 5 and R 6 independently are selected from the group consisting of a linear or branched C 1-40 alkyl group, a linear or branched C 2-40 alkenyl group, a linear or branched C 2-40 alkynyl group, a linear or branched C 1-40 haloalkyl group, and a Si(C 1-40 alkyl) 3 group; and

R 7 and R 8 independently are selected from the group consisting of a linear or branched C 1-40 alkyl group, a linear or branched C 2-40 alkenyl group, a linear or branched C 2-40 alkynyl group, a linear or branched C 1-40 haloalkyl group, and a Si(C 1-40 alkyl) 3 group.

13. A thin film semiconductor comprising a compound of claim 1 .

14. A composite comprising a substrate and the thin film semiconductor of claim 13 deposited on the substrate.

15. An electronic device, an optical device, or an optoelectronic device comprising the thin film semiconductor of claim 13 .

16. An electronic device, an optical device, or an optoelectronic device comprising the composite of claim 14 .

17. A field effect transistor device comprising a source electrode, a drain electrode, a gate electrode, and the thin film semiconductor of claim 13 in contact with a dielectric material.

18. The field effect transistor device of claim 17 , wherein the field effect transistor has a structure selected from top-gate bottom-contact structure, bottom-gate top-contact structure, top-gate top-contact structure, and bottom-gate bottom-contact structure.

19. The field effect transistor device of claim 18 , wherein the dielectric material comprises an organic dielectric material.

20. The field effect transistor device of claim 18 , wherein the dielectric material comprises an inorganic dielectric material or a hybrid organic/inorganic dielectric material.