Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrode 9 is formed in a region outside of an element mounting region of a substrate 5 . The projected electrode 9 includes a protruding portion that protrudes from the front face of a molding resin portion 10 . The distal end of the protruding portion is a flat face 13 . In addition, a portion of the projected electrode 9 whose cross section is larger than the protruding portion is positioned inside the molding resin portion 10.
1. A semiconductor device comprising:
a substrate having a first surface and a second surface opposed to the first surface;
a semiconductor element on the first surface of the substrate;
a molding resin on the first surface of the substrate;
a first electrode on the first surface of the substrate, the first electrode formed in a region outside of the semiconductor element; and
a second electrode under the second surface of the substrate,
wherein the semiconductor element has an upper surface and a side surface, the upper surface and the side surface of the semiconductor element are directly in contact with the molding resin,
the first electrode has a depressed portion, which is exposed from the molding resin, and the depressed portion has a first upper surface which is lower than an upper surface of the molding resin,
the first electrode has a second upper surface, and the second upper surface of the first electrode and the upper surface of the molding resin are on the same plane.
2. The semiconductor device according to claim 1 ,
wherein the depressed portion has an inner side surface, the inner side surface of the depressed portion is connected to the first upper surface of the depressed portion.
3. The semiconductor device according to claim 1 ,
wherein the molding resin has an inner side surface, the inner side surface of the molding resin is connected to the inner side surface of the depressed portion, and the upper surface of the molding resin is connected to the inner side surface of the molding resin.
4. The semiconductor device according to claim 1 ,
wherein the depressed portion has given one of a tapered shape, an arc shape, and a multilevel shape.
5. The semiconductor device according to claim 1 ,
wherein the upper surface of the molding resin is flat.