Magnetoresistive element and manufacturing method of the same
View Patent ↗A magnetoresistive element has a magnetic layer, an insulating layer and a magnetic layer, which are laminated on a base electrode, and side walls of the magnetic layers that are formed when the magnetic layers are processed. At least one element selected from the group of consisting He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is injected into the side walls and edge portions of the magnetic layers to improve the magnetic characteristics of the first and second magnetic layers.
1. A magnetoresistive element comprising:
a laminated structure including a first magnetic layer, an insulating layer, and a second magnetic layer formed on a base electrode, wherein each of the first and second magnetic layers includes an outer periphery portion, at least one element selected from the group consisting of He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is included in each of the outer periphery portions, and a magnetization of the outer periphery portions of the first and second magnetic layers is deactivated; and a side wall formed on the laminated structure, the side wall containing materials of the first magnetic layer and the base electrode.
2. The magnetoresistive element according to claim 1 , wherein the first magnetic layer, the insulating layer, and the second magnetic layer are sequentially laminated on top of the base electrode.
3. The magnetoresistive element according to claim 2 , wherein a magnetization inversion current of the first magnetic layer is lower than a magnetization inversion current of the second magnetic layer.
4. A magnetoresistive element comprising:
a laminated structure including a first magnetic layer, an insulating layer, and a second magnetic layer formed on a base electrode, wherein at least one element selected from the group consisting of He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is injected into outer periphery portions of the first and second magnetic layers, said at least one element deactivating a magnetization of the outer periphery portions of the first and second magnetic layers; and a side wall formed on the laminated structure, the side wall containing materials of the first magnetic layer and the base electrode.
5. The magnetoresistive element according to claim 4 , wherein the side wall includes said at least one element injected therein.
6. The magnetoresistive element according to claim 5 , wherein the side wall attains an increased resistance as a result of said at least one element being injected in the side wall.
7. A magnetoresistive element comprising:
a laminated structure including a first magnetic layer, an insulating layer, and a second magnetic layer formed on a base electrode, wherein each of the first and second magnetic layers includes an outer periphery portion, at least one element selected from the group consisting of He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is included in each of the outer periphery portions, and a magnetization of the outer periphery portions of the first and second magnetic layers is deactivated; and a side wall formed on the laminated structure, the side wall containing materials of the first magnetic layer and the base electrode, and said at least one element.
8. The magnetoresistive element according to claim 7 , wherein the side wall attains an increased resistance as a result of said at least one element being included in the side wall.