Semiconductor integrated device
View Patent ↗A semiconductor integrated device in which electrostatic discharge damage can be reliably prevented, includes a semiconductor substrate in which an electrostatic protection circuit including a second diffusion region surrounding a first diffusion region as a local region is formed in a main surface; a metal pad opposed to the main surface; and a conductive bump formed so as to face a top surface of the metal pad, wherein in a surface opposed to the metal pad of the conductive bump, a projection which is in contact with the metal pad is provided in a range opposed to the first diffusion region.
1. A semiconductor integrated device comprising:
a semiconductor substrate having at least one electrostatic protection circuit formed in a main surface thereof;
a metal pad confronting said main surface in its entirety via one major surface thereof; and
a conductive bump confronting the other major surface of said metal pad,
wherein said electrostatic protection circuit includes a first conductive region and a second conductive region which are adjacent to each other,
said conductive bump is, in its entirety, opposed to said main surface,
said first conductive region is surrounded by said second conductive region and, in an opposed surface, opposed to said metal pad, of said conductive bump, said conductive bump has at least one projection partially projecting toward said first conductive region so that said projection abuts said metal pad.
2. The semiconductor integrated device according to claim 1 , wherein an insulating film is formed between a region excluding said projection of said opposed surface of said conductive bump and said metal pad.
3. The semiconductor integrated device according to claim 1 , wherein said second conductive region is connected to a power supply line or a ground line.
4. The semiconductor integrated device according to claim 2 , wherein said second conductive region is connected to a power supply line or a ground line.
5. The semiconductor integrated device according to claim 1 , wherein an insulating layer is formed between said metal pad and the main surface of said semiconductor substrate, and
a conductive member penetrating said insulating layer to electrically connect said metal pad and said first conductive region is provided.
6. The semiconductor integrated device according to claim 2 , wherein an insulating layer is formed between said metal pad and the main surface of said semiconductor substrate, and
a conductive member penetrating said insulating layer to electrically connect said metal pad and said first conductive region is provided.
7. The semiconductor integrated device according to claim 3 , wherein an insulating layer is formed between said metal pad and the main surface of said semiconductor substrate, and
a conductive member penetrating said insulating layer to electrically connect said metal pad and said first conductive region is provided.
8. The semiconductor integrated device according to claim 4 , wherein an insulating layer is formed between said metal pad and the main surface of said semiconductor substrate, and
a conductive member penetrating said insulating layer to electrically connect said metal pad and said first conductive region is provided.
9. The semiconductor integrated device according to claim 1 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
10. The semiconductor integrated device according to claim 2 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
11. The semiconductor integrated device according to claim 3 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
12. The semiconductor integrated device according to claim 4 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
13. The semiconductor integrated device according to claim 5 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
14. The semiconductor integrated device according to claim 6 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
15. The semiconductor integrated device according to claim 7 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.
16. The semiconductor integrated device according to claim 8 , wherein said electrostatic protection circuit is a transistor using said first conductive region as a drain region and said second conductive region as a source region.