Light-emitter and transistor
View Patent ↗A light-emitter with a bank having an upper surface located at a height of h0 with reference to the top surface of the base layer and a circumferential surface facing the aperture in the bank. When h denotes a height of a given point on the circumferential surface with reference to the top surface and x denotes a distance, measured in a direction along the top surface, of the given point from a boundary between the upper and circumferential surface, a second-order derivative of h with respect to x is continuous at a point corresponding to the boundary, h being smaller than h0. An inflection point of the second-order derivative is located at a height of 0.9h0 or greater with reference to the top surface, and a top surface of the functional layer is in contact with the circumferential surface at a contact point near the inflection point.
1. A light-emitter comprising:
a base layer including a first electrode;
a bank defining an aperture on the base layer, the aperture having a major axis and a minor axis in plan view;
a functional layer located within the aperture and in contact with a top surface of the base layer; and
a second electrode corresponding in position to the first electrode with the functional layer interposed therebetween, wherein
in a cross-section passing through the major axis of the aperture in a perpendicular direction to the top surface of the base layer,
the bank has an upper surface located at a height of h0, with reference to the top surface of the base layer, and a circumferential surface facing the aperture,
when h denotes a height of a given point on the circumferential surface with reference to the top surface of the base layer, and x denotes a distance, measured in a direction along the top surface, of the given point from a boundary between the upper surface and the circumferential surface of the bank, a second-order derivative of h with respect to x is continuous at a point corresponding to the boundary, h being smaller than h0,
an inflection point of the second-order derivative, at which the second-order derivative changes from approximately 0 to a negative value, is located at a height of 0.9h0 or greater with reference to the top surface of the base layer, and
a top surface of the functional layer is in contact with the circumferential surface at a contact point near the inflection point.
2. The light-emitter of claim 1 , wherein
the inflection point is located at a height of 0.93h0 or greater with reference to the top surface of the base layer.
3. The light-emitter of claim 1 , wherein
in the cross-section passing through the major axis of the aperture in the perpendicular direction to the top surface of the base layer,
the contact point of the top surface of the functional layer and the circumferential surface is located below the inflection point, and a distance of the contact point from the inflection point in the perpendicular direction is no greater than 40 nm.
4. The light-emitter of claim 1 , wherein
in the cross-section passing through the major axis of the aperture in the perpendicular direction to the top surface of the base layer,
the contact point of the upper surface of the functional layer and the circumferential surface is farther from the upper surface of the bank than the infection point is, and a distance of the contact point from the inflection point in a direction along the major axis of the aperture is no greater than 440 nm.
5. The light-emitter of claim 1 , wherein
the functional layer is formed by a coating method.
6. The light-emitter of claim 1 , wherein
the second-order derivative is continuous from the boundary between the upper surface and the circumferential surface of the bank to a boundary between the top surface of the base layer and the circumferential surface.
7. A transistor comprising:
a bank defining an aperture having a major axis and a minor axis in plan view;
a gate electrode located below or above the aperture;
a gate insulation film located closer to the aperture than the gate electrode is;
a base layer located below the bank and having a source electrode and a drain electrode, at least a portion of the source electrode and a portion of the drain electrode being located within the aperture; and
a semiconductor layer located within the aperture and in contact with the base layer, the semiconductor layer corresponding in position to the gate electrode with the gate insulation film interposed therebetween wherein
in a cross-section passing through the major axis of the aperture in a perpendicular direction to the top surface of the base layer,
the bank has an upper surface located at a height of h0 with reference to the top surface of the base layer, and a circumferential surface facing the aperture,
when h denotes a height of a given point on the circumferential surface with reference to the top surface of the base layer, and x denotes a distance, measured in a direction along the top surface, of the given point from a boundary between the upper surface and the circumferential surface of the bank, a second-order derivative of h with respect to x is continuous at a point corresponding to the boundary, h being smaller than h0,
an inflection point of the second-order derivative, at which the second-order derivative changes from approximately 0 to a negative value, is located at a height of 0.9h0 or greater with reference to the top surface of the base layer, and
a top surface of the functional layer is in contact with the circumferential surface at a contact point near the inflection point.
8. The transistor of claim 7 , wherein
the inflection point is located at a height of 0.93h0 or greater with reference to the top surface of the base layer.
9. The transistor of claim 7 , wherein
in the cross-section passing through the major axis of the aperture in the perpendicular direction to the top surface of the base layer,
the contact point of the top surface of the functional layer and the circumferential surface is located below the inflection point, and a distance of the contact point from the inflection point in the perpendicular direction is no greater than 40 nm.
10. The transistor of claim 7 , wherein
in the cross-section passing through the major axis of the aperture in the perpendicular direction to the top surface of the base layer,
the contact point of the upper surface of the functional layer and the circumferential surface is farther from the upper surface of the bank than the infection point is, and a distance of the contact point from the inflection point in a direction along the major axis of the aperture is no greater than 440 nm.
11. The transistor of claim 7 , wherein
the functional layer is formed by a coating method.
12. The transistor of claim 7 , wherein
the second-order derivative is continuous from the boundary between the upper surface and the circumferential surface of the bank to a boundary between the top surface of the base layer and the circumferential surface.