Nitride-based semiconductor light-emitting element
View Patent ↗A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ 2 (mod 180°), which is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light, is an angle which does not include 0° or 90°.
1. A nitride-based semiconductor light-emitting element comprising:
a substrate which has a principal surface, a rear surface that is a light extraction surface, and a plurality of lateral surfaces; and
a nitride semiconductor multilayer structure formed on the principal surface of the substrate, wherein
the nitride semiconductor multilayer structure includes an active layer which emits polarized light,
the active layer has a principal surface of an m-plane;
angle θ is greater than 90°, and
angle θ 2 (mod 180°) is an angle which does not include 0° or 90°,
where the angle θ is an angle which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, and
the angle θ 2 is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a [11-20] direction.
2. The nitride-based semiconductor light-emitting element of claim 1 , wherein the substrate is an off-cut substrate of not more than 5°.
3. The nitride-based semiconductor light-emitting element of claim 1 , wherein a value of (θ−90°) is not less than a value of the angle θ 1 which satisfies Formula 9:
θ1=51.0−21.5× n 2 (Formula 9),
where n 2 is a refractive index of a medium which is in contact with the plurality of lateral surfaces of the substrate.
4. The nitride-based semiconductor light-emitting element of claim 3 , wherein the value of (θ−90°) is greater than critical angle θc which is determined by refractive indices n 1 and n 2 , where n 1 is a refractive index for light of the substrate.
5. The nitride-based semiconductor light-emitting element of claim 1 , wherein planar shapes of the principal and rear surfaces of the substrate are a quadrangular shape, and the plurality of lateral surfaces are four lateral surfaces.
6. The nitride-based semiconductor light-emitting element of claim 5 , wherein planar shapes of the principal and rear surfaces of the substrate are a parallelogrammatic shape.
7. The nitride-based semiconductor light-emitting element of claim 5 , wherein planar shapes of the principal and rear surfaces of the substrate are a square shape.
8. The nitride-based semiconductor light-emitting element of claim 5 , wherein a planar shape of the principal surface and the rear surface of the substrate is a rectangular shape.
9. The nitride-based semiconductor light-emitting element of claim 5 , wherein planar shapes of the principal and rear surfaces of the substrate are a rhombic shape.
10. The nitride-based semiconductor light-emitting element of claim 1 , wherein the angle θ 2 (mod 90°) is not less than 25° and not more than 65°.
11. The nitride-based semiconductor light-emitting element of claim 1 , wherein the angle θ 2 (mod 90°) is not less than 35° and not more than 55°.
12. The nitride-based semiconductor light-emitting element of claim 1 , wherein the angle θ 2 (mod 90°) is not less than 40° and not more than 50°.
13. The nitride-based semiconductor light-emitting element of claim 1 , wherein the rear surface of the substrate has a plurality of elevated portions.
14. The nitride-based semiconductor light-emitting element of claim 13 , wherein the elevated portions have a conical shape or a hemispherical shape and are two-dimensionally arranged across the rear surface of the substrate.
15. The nitride-based semiconductor light-emitting element of claim 13 , wherein
the elevated portions have a striped shape, and
γ (mod 180°) is not less than 5° and not more than 175° where γ is an absolute value of an angle which is formed between an extending direction of the striped shape and a polarization direction of the polarized light.
16. The nitride-based semiconductor light-emitting element of claim 15 , wherein γ (mod 180°) is not less than 30° and not more than 150°.
17. The nitride-based semiconductor light-emitting element of claim 1 , wherein
σ1 (mod 180°) is not less than 85° and not more than 95° where σ1 is an absolute value of an angle formed between a polarization direction of the polarized light and a normal line of the principal surface of the substrate, and
σ2 (mod 180°) is not less than 85° and not more than 95° where σ2 is an absolute value of an angle formed between the polarization direction of the polarized light and a normal line of the rear surface of the substrate.
18. A light source, comprising the nitride-based semiconductor light-emitting element as set forth in claim 1 and a wavelength converter including a phosphor that converts at least a wavelength of light emitted from the rear surface of the substrate.