Solid-state imaging element and electronic apparatus
View Patent ↗A solid-state imaging element includes a light receiving unit formed on a semiconductor base, and an anti-reflection film formed on the light receiving unit. The anti-reflection film has a plurality of planar layers whose planar layer in an upper layer is narrower than the planar layer in a lower layer.
1. A solid-state imaging element, comprising:
a light receiving unit formed on a semiconductor base;
an anti-reflection film formed on the light receiving unit, the anti-reflection film having a plurality of planar layers whose planar layer in an upper layer is narrower than the planar layer in a lower layer; and
a waveguide formed above the anti-reflection film, wherein the waveguide comprises a clad layer and a core layer, the clad layer forming a concave portion above the anti-reflection film, and the core layer being formed on the clad layer and filling the concave portion of the clad layer.
2. The solid-state imaging element according to claim 1 , wherein a width and a thickness of each of the plurality of planar layers is selected for each pixel color.
3. The solid-state imaging element according to claim 1 , wherein the core layer having has a refractive index higher than a refractive index of the clad layer.
4. An electronic apparatus, comprising:
an optical system;
a solid-state imaging element including:
a light receiving unit formed on a semiconductor base;
an anti-reflection film formed on the light receiving unit, the anti-reflection film having a plurality of planar layers whose planar layer in an upper layer is narrower than the planar layer in a lower layer; and
a waveguide formed above the anti-reflection film, wherein the waveguide comprises a clad layer and a core layer, the clad layer forming a concave portion above the anti-reflection film, and the core layer being formed on the clad layer and filling the concave portion of the clad layer; and
a signal processing circuit configured to process an output signal of the solid-state imaging element.
5. The electronic apparatus according to claim 4 , wherein a width and a thickness of each of the plurality of the planar layers is selected for each pixel color.
6. The electronic apparatus according to claim 4 , wherein the core layer has a refractive index higher than a refractive index of the clad layer.
7. The solid-state imaging element according to claim 1 , wherein the anti-reflection film includes a material film formed between and a first material film and a second material film, the first material film and the second material film each having a refractive index higher than a refractive index of the material film.
8. The solid-state imaging element according to claim 7 , wherein the first material film and the second material film are formed of different material.