Plasma processing apparatus and plasma processing method
View Patent ↗According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.
1. A plasma processing apparatus comprising;
an induction coupling-type plasma torch unit that includes
a dielectric member that defines a ring-shape chamber constituting ring-shape space which communicates with an opening portion having an opening width of 1 mm or more,
a gas supply pipe that introduces gas into an inside of the ring-shape chamber, and
a coil that is provided in a vicinity of the dielectric member defining the ring-shape chamber;
a high-frequency power supply that is connected to the coil; and
a base material mounting table that is configured to be mounted with a base material near the opening portion, wherein a distance between an end surface of the opening portion and a base material is 1 mm or less, wherein
the dielectric member has an outside dielectric block that defines an outside boundary of the ring-shape space; and an inside dielectric block that is inserted into the outside dielectric block and defines an inside boundary of the ring-shape space,
the shape of the ring-shaped space is a continuous loop having straight portions constituted by two long sides and two short sides connected to both ends of the straight portions, the two short sides being semicircular, semielliptical, or linear, and
the opening portion is a linear rectangular opening portion provided along only one of the two long sides constituting the straight portions, the opening portion opening towards a direction perpendicular to the longitudinal direction of the one of the two long sides.
2. The plasma processing apparatus according to claim 1 , wherein:
the ring-shape chamber has a long shape;
the opening portion has a long and linear shape;
the coil has a long shape in parallel with a longitudinal direction of the opening portion; and
a moving mechanism, that is configured to move the chamber relative to the base material mounting table perpendicularly with respect to the longitudinal direction of the opening portion, is provided.
3. The plasma processing apparatus according to claim 1 , wherein a length of the opening portion is shorter than a long axis diameter of the ring-shape space constituted by the ring-shape chamber.
4. The plasma processing apparatus according to claim 2 , further comprising a cooling medium path that is provided in parallel with the longitudinal direction of the opening portion in an inside of the dielectric member.
5. The plasma processing apparatus according to claim 2 , further comprising a dielectric tube that is joined to the dielectric member, is disposed in parallel with the longitudinal direction of the opening portion, and has an inside forming an cooling medium path.
6. The plasma processing apparatus according to claim 1 , wherein the opening width of the opening portion is the same as a width of the ring-shape space constituted by the ring-shape chamber.
7. The plasma processing apparatus according to claim 1 , wherein a long axis diameter of the ring-shape space constituted by the ring-shape chamber is 10 mm or more.
8. The plasma processing apparatus according to claim 1 , further comprising a planar cover that is provided in a vicinity of the base material mounting table so as to surround an edge portion of a base material when the base material is mounted on the base material mounting table.
9. The plasma processing apparatus according to claim 8 , wherein a surface of the cover and a surface of the base material mounted on the base material mounting table are disposed on the same plane.
10. The plasma processing apparatus according to claim 8 , wherein at least a surface of the cover is formed of an insulating material.