Method for forming pattern and method for producing original lithography mask
View Patent ↗A method forming a pattern includes a process in which self-assembly material is formed on the substrate where on which a fiducial mark is formed, and the self-assembly material is separated in micro phase to form a self-assembled pattern. The position error from a predetermined formation position of the self-assembled pattern is measured on the basis of the fiducial mark, and a pattern for an alignment as well as a peripheral circuit pattern are formed on the substrate. The formation position of at least one pattern among the pattern for alignment and peripheral circuit pattern is corrected using the position error.
1. A method for forming a pattern, comprising:
forming a self-assembly material containing a first polymer portion and a second polymer portion on a substrate having a fiducial mark; and
heating the self-assembly material to form a first pattern;
measuring a position error of the first pattern on the basis of the fiducial mark; and
forming a second pattern on the substrate based on the position error.
2. The method of claim 1 , further comprising:
forming a frame pattern on the substrate, wherein a chemical guide layer is formed inside the frame pattern, and
the self-assembly material is formed on the chemical guide layer.
3. The method of claim 2 , wherein the first polymer portion is hydrophobic and the second polymer portion is hydrophilic, and the frame pattern comprises a surface tension that is between the first polymer portion and the second polymer portion.
4. The method of claim 1 , wherein the first pattern comprises a first part aligned with the first polymer portion and a second part aligned with the second polymer portion.
5. The method of claim 4 , wherein the first polymer portion is hydrophobic and the second polymer portion is hydrophilic, and the frame pattern comprises a surface tension that is between the first polymer portion and the second polymer portion.
6. The method of claim 5 , wherein one of the first part or the second part is selectively removed to provide a plurality of first portions comprising one of the first polymer portion of the second polymer portion.
7. The method of claim 6 , further comprising:
forming a peripheral circuit pattern having multiple circuit patterns coupled with the first portions, wherein a formation position of each circuit pattern is corrected using a position error based on the position of the first part.
8. The method of claim 4 , wherein:
a frame pattern is formed on a predetermined area of the substrate, and the self-assembly material is formed inside the frame pattern; the method further comprising:
selectively removing the first part after separating the self-assembly material by a micro phase separation process; and
forming a connection pattern, which connects the peripheral circuit pattern and area where first part is removed to an area where the frame pattern is formed.
9. The method of claim 8 , wherein the first polymer portion is hydrophobic and the second polymer portion is hydrophilic, and the frame pattern comprises a surface tension that is between the first polymer portion and the second polymer portion.
10. The method of claim 4 , wherein:
a frame pattern is formed on a predetermined area of the substrate, and the self-assembly material is formed inside the frame pattern, the method further comprising:
selectively removing the first part after separating the self-assembly material by a micro phase separation process; and
forming a connection pattern, which connects a peripheral circuit pattern and area where first part is removed to an area where the frame pattern is formed.
11. The method of claim 10 , wherein a resist is coated in the area where the frame pattern is formed; and
the resist is processed by lithographic exposure and development to form the connection pattern.
12. The method of claim 11 , wherein the first polymer portion is hydrophobic and the second polymer portion is hydrophilic, and the frame pattern comprises a surface tension that is between the first polymer portion and the second polymer portion.
13. A method for forming a pattern, comprising:
forming a self-assembly material layer containing a first polymer portion and a second polymer portion on a substrate having a fiducial mark;
forming a first pattern in the self-assembly material layer by micro-phase separating the self-assembly material layer;
measuring a position error of the first pattern on the basis of the fiducial mark; and
forming a second pattern on the substrate based on the position error.
14. The method of claim 13 , wherein the self-assembly material layer is heated to form the first pattern.
15. The method of claim 14 , further comprising:
forming a frame pattern on the substrate, wherein a chemical guide layer is formed inside the frame pattern, and
the self-assembly material is formed on the chemical guide layer.
16. The method of claim 15 , wherein the first polymer portion is hydrophobic and the second polymer portion is hydrophilic, and the frame pattern comprises a surface tension that is between the first polymer portion and the second polymer portion.
17. The method of claim 13 , wherein the second pattern is a higher precision alignment mark for the first pattern.
18. A method for producing an original lithography mask comprising:
forming frame pattern surrounding a predetermined area on a masked substrate which has a fiducial mark and where a film is prepared on an upper surface thereof;
forming a self-assembly material containing a first segment as well as a second segment inside the frame pattern;
separating the self-assembly material in a micro phase and to form a self-assembled pattern containing a plurality of first portions comprising the first segment and a plurality of second portions containing the second segment;
measuring a position error, from a predetermined formation position of one of:
the self-assembled pattern,
the first part, or
the second part, on the basis of the fiducial mark;
forming a pattern for alignment and a peripheral circuit pattern on the substrate;
selectively removing the first portions; and
transferring the pattern for alignment, the peripheral circuit pattern and the pattern corresponding to the first portions, to the film;
wherein
at least one pattern selected from the group consisting of the pattern for alignment and the peripheral circuit pattern, is corrected using the position error.
19. The method of claim 18 , further comprising:
forming a second self-assembly material containing a third segment and a fourth segment on the area where the frame pattern is formed; and
separating the second self-assembly material in the micro-phase to form a second self-assembled pattern containing a third part with the third segment and a fourth part with the fourth segment.
20. The method of claim 19 , further comprising:
forming a connection pattern that connects the peripheral circuit pattern and the area where the first part is removed, by selectively removing the third part.
21. The method of claim 19 , wherein a formation position of the pattern for alignment is corrected using a position error of the first self-assembled pattern, and a formation position of the peripheral circuit pattern using a position error of the first pattern.