Molecular memory
View Patent ↗A molecular memory device has an insulating film with a cavity, the cavity having an upper portion and a lower portion; a first conductive member with a portion exposed at the lower portion of the cavity; a second conductive member with a portion exposed at the upper portion of the cavity; and a resistance varying-type molecular chain disposed in the cavity and bonded with the first conductive member or the second conductive member. The cavity is wider than at least one of the first conductive member along a first direction and the second conductive member along a second direction.
1. A molecular memory device, comprising:
an insulating film having a plurality of cavities arranged along a first direction, the plurality of cavities including a cavity that extends along a second direction that intersects the first direction and has an upper portion and a lower portion;
a first conductive member having an upper surface exposed at the lower portion of the cavity;
a second conductive member having a lower surface exposed at the upper portion of the cavity; and
a resistance varying-type molecular chain disposed in the cavity and bonded to either the first conductive member or the second conductive member,
wherein the cavity is wider along the first direction than the second conductive member.
2. The molecular memory device of claim 1 , wherein the second conductive member includes:
a main body portion; and
a protrusion portion above the first conductive member, the protrusion portion having a lower surface and a side surface and protruding from the main body portion towards the first conductive member, the lower surface of the protrusion portion exposed at the upper surface of the cavity.
3. The molecular memory device of claim 2 , wherein a portion of the side surface of the protrusion portion is exposed at the upper portion of the cavity.
4. The molecular memory device of claim 2 , wherein the main body portion of the second conductive member does not comprise a material of the second conductive member.
5. The molecular memory device of claim 4 , wherein the main body portion of the second conductive member comprises a semiconductor material.
6. The molecular memory device of claim 2 , wherein the first conductive member comprises tungsten, and the protrusion portion of the second conductive member comprises molybdenum.
7. The molecular memory device of claim 1 , wherein the first conductive member has a side surface and a portion of the side surface is exposed at the lower portion of the cavity.
8. The molecular memory device of claim 1 , wherein the upper portion of the cavity is approximately perpendicular to a sidewall of the cavity.
9. The molecular memory device of claim 1 , wherein a sidewall of the cavity has a curved shape.
10. The molecular memory device of claim 1 , further comprising:
a plurality of first conductive members arrayed at a first regular interval in the second direction; and
a plurality of second conductive members extending in the second direction, the plurality arrayed in the first direction at a second regular interval.
11. The molecular memory device of claim 10 , wherein the plurality of first conductive members are further arrayed in a third direction, orthogonal to both the first and second direction.
12. The molecular memory device of claim 1 , wherein the first conductive member comprises tungsten and the second conductive member comprises molybdenum.
13. The molecular memory device of claim 1 , wherein the resistance varying-type molecular chain is 4-[2-amino-5-nitro-4-(phenylethynyl)phenylethynyl]benzenethiol.
14. The molecular memory device of claim 1 , wherein the resistance varying-type molecular chain comprises a π-conjugated system extending a single direction.
15. The molecular memory device of claim 1 , further comprising:
a gate electrode above a gate insulating film, the gate insulating film disposed on a surface between a source region and a drain region;
wherein, the first conductive member contacts the drain region.
16. A molecular memory device, comprising:
an insulating film having a plurality of cavities arranged along a first direction, the plurality of cavities including a cavity that extends along a second direction that intersects the first direction and has an upper portion and a lower portion;
a first conductive member comprising a first conductive material, the first conductive member extending in the first direction and having a portion exposed at the lower portion of the cavity;
a second conductive member comprising a second conductive material different from the first conductive material, the second conductive member extending in the second direction and having a portion exposed at the upper portion of the cavity; and
a resistance varying-type molecular chain arranged in the cavity and bonded with the first conductive member or the second conductive member, wherein
the cavity is wider along the first direction than the second conductive member.
17. The molecular memory device of claim 16 , wherein the second conductive member comprises:
a main body portion extending in the second direction; and
a protrusion portion above the first wiring and protruding from the main body portion towards the first wiring, the protrusion portion exposed at the upper portion of the cavity.
18. The molecular memory device of claim 17 , wherein the first conductive member has a side surface which is fully coated with the insulating material, such that only an upper surface the first conductive member is the portion exposed at the lower portion of the cavity.