Film embedding method and semiconductor device
View Patent ↗A method of forming an embedded film comprises depositing a first layer on a second layer that is disposed on a substrate and includes a material different from materials included in the first layer, forming an aperture through the first layer and into the second layer, the aperture having a side surface that includes an exposed portion of the first layer and an exposed portion of the second layer, bringing a material that includes organic molecules into contact with the exposed portion of the first layer and the exposed portion of the second layer to form a monomolecular film that covers the side surface, and forming the embedded film in the aperture with a material having a high enough affinity to the monomolecular film to substantially fill the aperture.
1. A method of forming an embedded film, the method comprising:
depositing a first layer on a second layer, the second layer being disposed above a substrate and including a material different from materials included in the first layer;
forming an aperture through the first layer and into the second layer, the aperture having a side surface that includes an exposed portion of the first layer and an exposed portion of the second layer;
covering the side surface of the aperture with a monomolecular film that contains a material that includes organic molecules; and
embedding a material in the aperture so as to substantially fill the aperture and form the embedded film.
2. The film embedding method of claim 1 , wherein said material embedded in the aperture has a high enough affinity to the self-assembled monolayer to cause the material to substantially fill the aperture.
3. The film embedding method of claim 1 , wherein the monomolecular film is formed by subjecting the organic molecules and at least one of the exposed portion of the first layer and the exposed portion of the second layer to a silane coupling reaction.
4. The film embedding method of claim 1 , wherein the monomolecular film is formed by forming one of hydroxyl (OH) groups and amino groups on the side surface and then subjecting the organic molecules and at least one of the exposed portion of the first layer and the exposed portion of the second layer to a silane coupling reaction.
5. The film embedding method of claim 4 , wherein the hydroxyl groups are formed on the side surface using one of hydrogen peroxide (H 2 O 2 ) and ozone (O 3 ).
6. The film embedding method of claim 4 , wherein the hydroxyl groups are formed on the side surface using a liquid phase process.
7. The film embedding method of claim 1 , wherein the organic molecules comprise an alkylsilane.
8. The film embedding method of claim 1 , wherein the organic molecules comprise one or more molecules selected from the group of organosilanes consisting of hexamethyldisilane, octadecylsilane, octadecanethiol, and octadecanesulfonic acid.
9. The film embedding method of claim 1 , wherein the monomolecular film comprises a self-assembled monolayer.
10. The film embedding method of claim 1 , wherein the organic molecules include straight chains in which carbon atoms are connected.
11. The film embedding method of claim 1 , wherein the first layer and the second layer have a different affinity to the embedded film.
12. The film embedding method of claim 1 , wherein the first layer and the second layer have a lower affinity to the embedded film than the monomolecular film.
13. A semiconductor device, comprising:
a first layer disposed on a second layer being disposed above a substrate and including a material different from materials included in the first layer, the first layer and the second layer having an aperture that is formed through the first layer and into the second layer and has a side surface in contact with a portion of the first layer and a portion of the second layer;
a monomolecular film that is formed on the side surface of the aperture and includes organic molecules; and
an embedded film disposed on the monomolecular film to substantially fill the aperture.
14. The semiconductor device of claim 13 , wherein embedded film comprises a silicon oxide film.
15. The semiconductor device of claim 13 , wherein the organic molecules comprise an alkylsilane.
16. The semiconductor device of claim 13 , wherein the organic molecules comprise one or more molecules selected from the group of organosilanes consisting of hexamethyldisilane, octadecylsilane, octadecanethiol, and octadecanesulfonic acid.
17. The semiconductor device of claim 13 , wherein the monomolecular film comprises a self-assembled monolayer.
18. The semiconductor device of claim 13 , wherein the organic molecules include straight chains of connected carbon atoms.
19. The semiconductor device of claim 13 , wherein the first layer and the second layer have a different affinity to the embedded film.
20. The semiconductor device of claim 13 , wherein the first layer and the second layer have a lower affinity to the embedded film than the monomolecular film.