Semiconductor device manufacturing method and semiconductor device

1. A semiconductor device manufacturing method, comprising:

forming, on an insulating base material, a plurality of first support elements, each having a top surface and side surfaces that extend from a top surface of the insulating base material;

forming a coating of amorphous silicon on the side surfaces;

removing the plurality of first support elements, wherein a plurality of apertures is defined by a remainder of the coating of amorphous silicon;

filling the plurality of apertures with an insulating film;

planarizing the insulating film until an upper portion of the coating is exposed between adjacent surface regions of the insulating film; and

siliciding the coating to form an interconnect.

2. The semiconductor device manufacturing method according to claim 1 , wherein the siliciding of the coating comprises forming a metal film on the exposed portion of the coating and the planarized surface of the insulating film filled in the apertures.

3. The semiconductor device manufacturing method according to claim 2 , wherein the metal film comprises at least one of nickel, cobalt, and titanium.

4. The semiconductor device manufacturing method according to claim 2 , wherein the metal film contains nickel, and the siliciding of the coating comprises performing a heat treatment on the coating and the metal film to form the interconnect, the interconnect including a compound that comprises NiSi phase and Ni 2 Si phase.

5. The semiconductor device manufacturing method according to claim 2 , wherein the metal film contains nickel, and the siliciding of the coating comprises:

performing a heat treatment to form a θ phase of nickel silicide; and

decomposing the θ phase of the nickel silicide into a compound comprising NiSi phase and Ni 2 Si phase.

6. The semiconductor device manufacturing method according to claim 1 , further comprising:

forming an interlayer film on the insulating film and the interconnect;

forming, on the interlayer film, a plurality of second support elements, each having side surfaces that extend from a top surface of the interlayer film;

forming a coating of metal on the side surfaces of the second support elements; and

removing the second support elements to form an interconnect with the remaining coating of metal.

7. A semiconductor device manufacturing method, comprising:

forming, on a base material, a plurality of support elements, each having a top surface and side surfaces that extend from a top surface of the base material;

forming a coating on the side surfaces;

forming a metal film containing nickel on side surfaces of the coating that extend from the top surface of the base material; and

performing a heat treatment to silicide the coating such that an interconnect is formed, wherein the interconnect includes a compound comprising NiSi phase and Ni 2 Si phase.

8. The semiconductor device manufacturing method according to claim 7 , wherein the forming of the interconnect includes:

performing the heat treatment to form a θ phase of nickel silicide; and

decomposing the θ phase of the nickel silicide into a compound comprising NiSi phase and Ni 2 Si phase.

9. The semiconductor device manufacturing method according to claim 7 , further comprising: prior to forming the metal film on the side surfaces of the coating, forming a mask on portions of the coating.

10. The semiconductor device manufacturing method according to claim 9 , wherein the mask is formed using a gas cluster ion beam.