Method for manufacturing semiconductor device including an inverted region formed by doping second conductive type impurities into diffusion region of a first conductive type
View Patent ↗A semiconductor device including a semiconductor substrate having a first conductive type layer; a first diffusion region which has the first conductive type and is formed in the first conductive type layer; a second diffusion region which has a second conductive type and an area larger than an area of the first diffusion region and overlaps the first diffusion region; and a PN junction formed at an interface between the first and the second diffusion regions. The second diffusion region includes a ring shaped structure or a guard ring includes an inverted region which has the second conductive type. According to such a configuration, it is possible to provide a semiconductor device having the required Zener characteristics with good controllability.
1. A manufacturing method of a semiconductor device, the method comprising:
preparing a semiconductor substrate having a first conductive type layer;
forming an insulator layer on the semiconductor substrate, the insulator layer including a second opening of a second size;
forming a silicon oxide film on the semiconductor substrate in an area corresponding to the second opening;
forming a resist pattern on the silicon oxide film and the insulator layer, the resist pattern including a first opening of a first size smaller than the second size;
doping a first conductive type impurity through the silicon oxide film into the first conductive type layer so as to form a first diffusion region which has an area corresponding to the first size;
removing the resist pattern such that the insulator layer and the silicon oxide film remain on the semiconductor substrate; and
doping a second type impurity through the silicon oxide film into the first conductive type layer so as to form a second diffusion region which has an area corresponding to the second size larger than an area of the first diffusion region and overlaps the first diffusion region,
wherein a part of the first diffusion region is inverted from the first conductive type to the second conductive type by doping the second type impurity so as to form a PN junction.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein the first conductive type layer is formed by epitaxial growth.
3. The manufacturing method of the semiconductor device according to claim 1 , wherein:
the doping the second conductive type impurity forms a guard ring, and
a second part of the first diffusion region is inverted from the first conductive type to the second conductive type by doping the second type impurity which forms the guard ring.
4. The manufacturing method of the semiconductor device according to claim 3 , wherein the guard ring is formed deeper than the first diffusion region.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein a thickness of the silicon oxide film is smaller than a thickness of the insulator layer.
6. The manufacturing method of the semiconductor device according to claim 1 , wherein the first opening is disposed on the silicon oxide film.