QUARTZ CRUCIBLE FOR GROWING SILICON SINGLE CRYSTAL, METHOD OF MANUFACTURING QUARTZ CRUCIBLE FOR GROWING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL
A quartz crucible for growing silicon single crystal comprises a crucible body made of a quartz material and a coating layer of a pure silicon which is formed on an inner wall of the crucible body and has purity equivalent to a silicon material that is to be filled into the crucible body. The pure silicon of the coating layer melts together with a silicon material filled in the quartz crucible.
1 . A quartz crucible for growing silicon single crystal comprising:
a crucible body made of a quartz material; and
a coating layer of a pure silicon which is formed on an inner wall of the crucible body and has a purity equivalent to a silicon material that is to be filled into the crucible body.
2 . The quartz crucible for growing silicon single crystal according to claim 1 , wherein
the coating layer is a polycrystalline silicon made by a polycrystalline processing.
3 . The quartz crucible for growing silicon single crystal according to claim 1 , wherein
a thickness of the coating layer at a top of the crucible body is thinner than at least a thickness of the coating layer at a bottom of the crucible body.
4 . The quartz crucible for growing silicon single crystal according to claim 1 , wherein
an unevenness surface is formed on the coating layer.
5 . A method of manufacturing a quartz crucible for growing silicon single crystal comprising:
applying a silicon powder to an inner wall of a crucible body made of a quartz material and
forming a coating layer of a pure silicon by changing the applied silicon powder to a polycrystalline silicon by a partial heat treatment.
6 . The method of manufacturing the quartz crucible for growing silicon single crystal according to claim 5 , wherein
the coating layer is formed so that a thickness of the coating layer at a top of the crucible body is thinner than at least a thickness of the coating layer at a bottom of the crucible body.
7 . The method of manufacturing the quartz crucible for growing silicon single crystal according to claim 5 , comprising:
forming an unevenness surface on the coating layer.
8 . A method of manufacturing a silicon single crystal comprising:
a filling step of filling a polysilicon lump as a raw material into a quartz crucible for growing silicon single crystal, the quartz crucible having a crucible body made of a quartz material upon which a coating layer of a pure silicon is formed on an inner wall thereof, the coating layer having a purity equivalent to a silicon material that is to be filled into the crucible body;
a melting step of heating the quartz crucible for growing silicon single crystal, to melt the filled polysilicon lump; and
a single crystal pulling up step of pulling up a silicon single crystal from silicon melt liquid which is made by melting the polysilicon lump, while heating the quartz crucible for growing silicon single crystal.
9 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
the coating layer which is formed on the inner wall of the crucible body of the quartz crucible for growing silicon single crystal, is a polycrystalline silicon made by a polycrystalline processing.
10 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
in the melting step, a pure silicon of the coating layer melts.
11 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
in the filling step, the polysilicon lump is filled so that it contacts closely with the coating layer which is formed on the inner wall of the crucible body of the quartz crucible for growing silicon single crystal, and
in the melting step, the crucible body is heated with a heater from an outside.
12 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
in the filling step, the polysilicon lump is filled with being pushed against the coating layer so that the coating layer which is formed on the inner wall of the crucible body of the quartz crucible for growing silicon single crystal, is transformed or is separated partially, and
in the melting step, a fragment of a pure silicon of the separated coating layer melts together with the polysilicon lump.
13 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
after the melting step, the coating layer remains on the inner wall of the crucible body above a surface of the silicon melt liquid.
14 . The method of manufacturing the silicon single crystal according to claim 8 , wherein
a scrap silicon of a single crystal, which comes out as a kerf loss in a silicon wafer manufacturing step which is a step after a silicon ingot manufacture, is used as the pure silicon of the coating layer formed on the inner wall of the crucible body of the quartz crucible for growing silicon single crystal.