IP Library Granted Patent US 9,224,416
Granted Patent B2
US 9,224,416 · App. 13/795,634 · Granted Dec 29, 2015

Near field transducers including nitride materials

Inventors: Tong Zhao (Eden Prairie, MN); Sarbeswar Sahoo (Shakopee, MN); Michael Christopher Kautzky (Eagan, MN); Amit Vasant Itagi (Hugo, MN)
Assignee: Seagate Technology LLC
G11B13/08G11B5/314G11B5/3106G11B5/4866G11B5/6088G11B13/04G11B2005/0021
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Quick Facts
Patent No.
US 9,224,416
App. No.
13/795,634
Granted
Dec 29, 2015
Kind
B2
Abstract

An apparatus that includes a near field transducer, the near field transducer including an electrically conductive nitride.

Claims (30)

1. An apparatus comprising:

a near field transducer, the near field transducer comprising an electrically conductive nitride.

2. The apparatus according to claim 1 , wherein the near field transducer comprises TiN, ZrN, TaN, HfN, or combinations thereof.

3. The apparatus according to claim 1 , wherein the entire near field transducer comprises the electrically conductive nitride.

4. The apparatus according to claim 3 , wherein the near field transducer includes only an electrically conductive nitride.

5. The apparatus according to claim 1 , wherein the near field transducer has a peg and disc structure and only the peg comprises the electrically conductive nitride.

6. The apparatus according to claim 5 , wherein the disc of the near field transducer comprises gold.

7. The apparatus according to claim 1 , wherein the entire near field transducer consists essentially of TiN, ZrN TaN, HfN, or combinations thereof.

8. The apparatus according to claim 1 further comprising an energy source, the energy source producing energy having a wavelength from about 300 nm to about 2000 nm.

9. The apparatus according to claim 5 , wherein only portions of the near field transducer comprise the electrically conductive nitride.

10. The apparatus according to claim 9 , wherein the near field transducer comprises at least one layer of the electrically conductive nitride material.

11. The apparatus according to claim 10 , wherein the at least one layer is on the bottom of the near field transducer.

12. The apparatus according to claim 10 , wherein the near field transducer comprises a multilayer structure of the electrically conductive nitride and another plasmonic, non-nitride material.

13. The apparatus according to claim 1 , wherein the electrically conductive nitride is dispersed throughout the near field transducer.

14. The apparatus according to claim 13 , wherein the electrically conductive nitride is a dopant in another plasmonic, non-nitride material.

15. The apparatus according to claim 13 , wherein another plasmonic, non-nitride material is a dopant in the electrically conductive nitride material.

16. An apparatus comprising:

an energy source;

a waveguide; and

a near field transducer, the near field transducer comprising an electrically conductive nitride, wherein the energy source, waveguide and near field transducer are configured to transmit light from the energy source to the waveguide and finally the near field transducer.

17. The apparatus according to claim 16 , wherein the near field transducer comprises TiN, ZrN, TaN, HfN, or combinations thereof.

18. The apparatus according to claim 16 , wherein the near field transducer comprises TiN, ZrN, TaN, HfN, or combinations thereof; and a non-nitride material selected from Au, Ag, Cu, or alloys thereof.

19. A disc drive comprising:

at least one actuator arm having a first end and a second end;

at least one head, wherein each arm has a head at the first end thereof and wherein each head comprises:

an energy source;

a near field transducer, the near field transducer comprising an electrically conductive nitride;

a magnetic reader; and

a magnetic writer wherein the energy source and the near field transducer are configured to transmit light from the energy source to the near field transducer in order to assist the magnetic writer with writing.

20. The disc drive according to claim 19 , wherein the near field transducer comprises TiN, ZrN, TaN, HfN, or combinations thereof; and a non-nitride material selected from Au, Ag, Cu, or alloys thereof.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2013
From: ZHAO, TONG; SAHOO, SARBESWAR; KAUTZKY, MICHAEL CHRISTOPHER; ITAGI, AMIT VASANT
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 029985/0130 →
Continuity (2)
Provisional Application 61637696 · Apr 24, 2012
Related Publication 20130279315A1 · Oct 24, 2013