Low-E glazing performance by seed structure optimization
View Patent ↗A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).
1. A method to form a low emissivity coating, the method comprising:
providing a transparent substrate;
forming a first layer above the transparent substrate, wherein the first layer comprises at least one of magnesium doped tin oxide or bismuth doped tin oxide;
forming a second layer above the first layer, wherein the second layer comprises zinc oxide having thickness less than 8 nm; and
forming a third layer above the second layer, wherein the third layer is operable as an infrared reflective layer.
2. The method of claim 1 wherein the transparent substrate comprises a glass substrate.
3. The method of claim 1 wherein the first layer has a doping concentration between 3 and 35 wt %.
4. The method of claim 1 wherein the first layer has a thickness between 6 and 50 nm.
5. The method of claim 1 wherein the second layer is formed in-situ on the first layer without exposing the first layer to ambient environment.
6. The method of claim 1 wherein the second layer is a non-continuous layer.
7. The method of claim 1 wherein the third layer has a thickness between 6 and 20 nm.
8. The method of claim 1 , further comprising at least one of:
depositing an antireflective film above the substrate;
depositing a metallic reflective film above the substrate; or depositing a protective film above the substrate.
9. The method of claim 1 , further comprising:
heat treating the substrate.
10. The method of claim 8 , wherein the heat treating comprises annealing at a temperature less than 1000 C for less than 10 minutes.
11. A method to form a low emissivity coating, the method comprising:
providing a transparent substrate;
forming a lower protective layer above the transparent substrate, wherein the lower protective layer comprises a nitride material and has a thickness of between about 10 nm and about 50 nm;
forming a lower oxide layer above the lower protective layer, wherein the lower oxide layer comprises a metal oxide or a metal alloy oxide;
forming a thermal stability layer above the lower oxide layer, wherein the thermal stability layer comprises at least one of magnesium doped tin oxide or bismuth doped tin oxide and has a thickness of between about 6 nm and about 50 nm;
forming a seed layer above the thermal stability layer, wherein a thickness of the seed layer is between 2 nm and 4 nm, wherein the second layer comprises zinc oxide having a (002) crystallographic orientation;
forming a reflective layer on the second layer, wherein the reflective layer comprises silver having a (111) crystallographic orientation;
forming a barrier layer above the reflective layer, wherein the barrier layer comprises at least one of titanium, nickel, or a combination thereof;
forming an upper oxide layer above the barrier layer, wherein the upper oxide layer comprises at least one of titanium dioxide, silicon nitride, silicon dioxide, silicon oxynitride, niobium oxide, silicon zirconium nitride, tin oxide, zinc oxide, or a combination thereof;
forming an optical filler layer above the upper oxide layer, wherein the optical filler layer comprises tin oxide; and
forming an upper protective layer above the optical filler layer, wherein the upper protective layer comprises at least one of silicon nitride, silicon oxynitride, titanium oxide, tin oxide, zinc oxide, niobium oxide, silicon zirconium nitride, or a combination thereof.
12. The method of claim 11 wherein the first layer has a doping concentration between 3 and 35 wt %.
13. The method of claim 11 wherein the second layer is a non-continuous layer.
14. A low emissivity panel, comprising
a transparent substrate;
a first layer disposed above the transparent substrate, wherein the first layer comprises at least one of magnesium doped tin oxide or bismuth doped tin oxide;
a second layer disposed above the first layer, wherein a thickness of the second layer is between 2 nm and 4 nm, wherein the second layer comprises zinc oxide having a (002) crystallographic orientation; and
a third layer disposed above the second layer, wherein the third layer comprises silver having a (111) crystallographic orientation.
15. The low emissivity panel of claim 14 wherein the transparent substrate comprises a glass substrate.
16. The low emissivity panel of claim 14 wherein the first layer has a doping concentration between 3 and 35 wt %.
17. The low emissivity panel of claim 14 wherein the first layer has a thickness between 6 and 50 nm.
18. The low emissivity panel of claim 14 wherein the second layer is a noncontinuous layer.
19. The low emissivity panel of claim 14 wherein the third layer has a thickness between 6 and 20 nm.
20. The low emissivity panel of claim 14 , further comprising at least one of:
an antireflective film above the substrate;
a metallic reflective film above the substrate; or
a protective film above the substrate.