Laser-induced gas plasma machining
View Patent ↗Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.
1. A method for removing material using plasma machining, the method comprising:
providing a substrate having a first surface and an opposing second surface;
passing a converging laser beam through the first surface, the substrate, and the opposing second surface to a location outside the substrate;
focusing the laser beam, after the laser beam has passed through the opposing second surface, at a focus point located outside the substrate and at a first distance beyond the opposing second surface of the substrate;
providing a gas at or near the focus point;
generating gas plasma by breaking down the gas using energy from the laser beam, the gas plasma being oriented away from the focus point and towards the opposing second surface of the substrate;
exposing a portion of the opposing second surface outside the substrate to the gas plasma; and
removing material from the portion of the opposing second surface using plasma machining.
2. The method of claim 1 wherein the energy generated by the laser beam is between 25 mJ and 50 mJ.
3. The method of claim 1 further comprising moving the substrate prior to exposing the portion of the opposing second surface to the gas plasma.
4. The method of claim 1 wherein the laser beam is generated using a YAG laser.
5. The method of claim 1 wherein the gas includes one at least of air, Nitrogen, Argon, or Hydrogen.
6. The method of claim 1 wherein the gas includes at least one of Hydrogen Fluoride (HF) or Carbon Tetraflouride (CF 4 ).
7. The method of claim 1 wherein the substrate includes at least one of fused-silica, metal, or ceramic.
8. The method of claim 1 wherein the first distance is between 3 mm and 10 mm.
9. The method of claim 1 wherein the substrate is disposed at an angle with respect to a path of the laser beam.
10. The method of claim 9 wherein the angle is less than 20 degrees.