Lasers with GaPSb barrier layers
View Patent ↗A laser active region can include a quantum well barrier having GaPSb. The active region can include one or more quantum wells, and a quantum well barrier having GaPSb bounding each side of each of the one or more quantum wells. The quantum well barrier can be GaP 1-w Sb w , where w ranges from about 0.12 to about 0.25 mole fraction, and can have a thickness of from about 20 Angstroms to about 50 Angstroms. The one or more quantum wells include InGaAs or InGaAsP. Various types of lasers can have the laser active region. Such a laser can be capable of emitting light having a wavelength of about 850 nm or +/−150 nm. As an example, a vertical cavity surface-emitting laser (VCSEL) having the laser active region. The laser may also be a tunneling laser.
1. A laser active region comprising:
one or more quantum wells; and
one or more quantum well barriers having GaPSb bounding each side of each of the one or more quantum wells;
wherein the quantum well barriers define the boundaries of each of the one or more quantum wells.
2. The laser active region of claim 1 , wherein the quantum well barrier is GaP 1-w ,Sb w , where w ranges from about 0.12 to about 0.25 mole fraction.
3. The laser active region of claim 2 , wherein w is about 0.18 mole fraction.
4. The laser active region of claim 1 , wherein the quantum well barrier has a thickness of from about 20 Angstroms to about 50 Angstroms.
5. The laser active region of claim 4 , wherein the quantum well barrier thickness is about 25 Angstroms.
6. The laser active region of claim 1 , wherein the one or more quantum wells include InGaAs.
7. The laser active region of claim 1 , wherein the one or more quantum wells include InGaAsP.
8. A laser having the laser active region of claim 1 .
9. The laser of claim 8 capable of emitting light having a wavelength of about 850 nm or +/−150 nm.
10. A vertical cavity surface-emitting laser (VCSEL) having the laser active region of claim 1 .
11. A tunneling laser having the laser active region of claim 1 .
12. A laser comprising:
one or more quantum wells having InGaAs; and
a quantum well barrier having GaPSb bounding each side of each of the one or more quantum wells.
13. The laser of claim 12 , wherein the quantum well barrier is GaP 1-w Sb w , where w ranges from about 0.12 to about 0.25 mole fraction.
14. The laser of claim 12 , wherein the quantum well barrier has a thickness of from about 20 Angstroms to about 50 Angstroms.
15. The laser of claim 12 , wherein the one or more quantum wells have at least a trace of P.
16. The laser of claim 12 , comprising:
a n-doped confining region operably coupled with a first side of an active region having the one or more quantum wells and quantum well barriers, the n-doped confining region having AlInGaP; and
a p-doped confining region operably coupled to a second side of the active region and having AlInGaP.
17. The laser of claim 16 , wherein the p-doped confining region includes a compositional ramp confining region adjacent to the active region.
18. A method of manufacturing the laser active region of claim 1 , the method comprising:
growing the GaPSb quantum well barrier using a non-equilibrium technique with a group V/III element ratio sufficient that the group V elements are held in place without the group V and group III elements segregating into separate phases.
19. The method of claim 18 , wherein the GaPSb quantum well barrier is grown to have one or more of:
GaP 1-w ,Sb w , where w ranges from about 0.12 to about 0.25 mole fraction; or
a thickness of from about 20 Angstroms to about 50 Angstroms.