Semiconductor device with capacitive coupling structure

1. A semiconductor device, comprising:

a chip;

a chip packaging structure at least partially surrounding the chip and having a receiving region configured to receive a first capacitive coupling structure;

a first capacitive coupling structure disposed in the receiving region; and

a second capacitive coupling structure disposed over the first capacitive coupling structure and capacitively coupled to the first capacitive coupling structure, wherein the first capacitive coupling structure comprises an antenna coupling element and the second capacitive coupling structure comprises an antenna or a test probe.

2. The semiconductor device of claim 1 , wherein the first capacitive coupling structure comprises a coupling plate.

3. The semiconductor device of claim 1 , wherein the second capacitive coupling structure comprises a coupling plate.

4. The semiconductor device of claim 1 , wherein the receiving region comprises a side of the chip packaging structure facing the chip.

5. The semiconductor device of claim 4 , wherein the first capacitive coupling structure is attached to the side of the chip packaging structure facing the chip.

6. The semiconductor device of claim 4 , further comprising an air gap disposed between the chip and the first capacitive coupling structure.

7. The semiconductor device of claim 1 , wherein the receiving region comprises a second side of the chip packaging structure facing away from the chip.

8. The semiconductor device of claim 7 , wherein the first capacitive coupling structure is attached to the second side of the chip packaging structure facing away from the chip.

9. The semiconductor device of claim 1 , wherein the first capacitive coupling structure is at least partially embedded in the chip packaging structure.

10. The semiconductor device of claim 1 , wherein a portion of the chip packaging structure is disposed between the first capacitive coupling structure and the second capacitive coupling structure.

11. The semiconductor device of claim 1 , wherein the second capacitive coupling structure is attached to a second side of the chip packaging structure facing away from the chip.

12. The semiconductor device of claim 1 , further comprising a shielding structure disposed between the chip and the first capacitive coupling structure.

13. The semiconductor device of claim 12 , wherein the shielding structure comprises a metallization layer.

14. The semiconductor device of claim 12 , wherein the shielding structure is at least partially embedded in the chip packaging structure.

15. The semiconductor device of claim 12 , wherein the chip comprises at least one through-via electrically coupled to the shielding structure.

16. The semiconductor device of claim 12 , further comprising a dielectric layer disposed between the shielding structure and the first capacitive coupling structure.

17. The semiconductor device of claim 16 , wherein the dielectric layer comprises a high-k dielectric.

18. The semiconductor device of claim 1 , wherein the chip packaging structure comprises an extension layer extending from at least one side of the chip.

19. The semiconductor device of claim 1 , further comprising at least one through-via electrically coupling the chip to the first capacitive coupling structure.

20. The semiconductor device of claim 12 , wherein the chip packaging structure comprises an extension layer extending from at least one side of the chip, wherein the extension layer comprises at least one through-via electrically coupled to the shielding structure, and at least one through-via electrically coupling the first capacitive coupling structure to the chip.

21. The semiconductor device of claim 1 , further comprising a dielectric layer disposed between the first capacitive coupling structure and the second capacitive coupling structure.

22. A semiconductor device, comprising:

a chip;

a first capacitive coupling structure disposed over the chip and electrically coupled to the chip;

a chip packaging structure at least partially surrounding the chip and the first capacitive coupling structure; and

a second capacitive coupling structure disposed outside the chip packaging structure and capacitively coupled to the first capacitive coupling structure, wherein the first capacitive coupling structure comprises an antenna coupler and the second capacitive coupling structure comprises an antenna or a test probe.

23. The semiconductor device of claim 22 , wherein the first capacitive coupling structure is at least partially embedded in the chip packaging structure.

24. A semiconductor arrangement, comprising:

a first chip;

a first chip packaging structure at least partially surrounding the first chip and having a first receiving region configured to receive a first antenna coupling element;

a first antenna coupling element disposed in the first receiving region;

a first antenna disposed over the first antenna coupling element and capacitively coupled to the first antenna coupling element;

a second chip;

a second chip packaging structure at least partially surrounding the second chip and having a second receiving region configured to receive a second antenna coupling element;

a second antenna coupling element disposed in the second receiving region;

a second antenna disposed over the second antenna coupling element and capacitively coupled to the second antenna coupling element; and

a third chip electrically coupled to the first chip and the second chip.

25. The semiconductor device of claim 24 , wherein the first chip comprises a first antenna tuner, and wherein the second chip comprises a second antenna tuner.

26. The semiconductor device of claim 25 , wherein the first antenna tuner is configured to tune in to a first frequency or frequency band and the second antenna tuner is configured to tune in to a second frequency or frequency band different from the first frequency or frequency band.