Arc deposition source having a defined electric field

1. Arc deposition device, comprising:

a cathode ( 309 ) comprising an evaporating surface having material that is to be evaporated,

magnetic means ( 305 ) configured to generate a magnetic field over the evaporating surface of the cathode ( 309 ), wherein the magnetic field comprises magnetic field lines ( 311 ) exhibiting components parallel and perpendicular to the evaporating surface of the cathode and wherein the magnetic means ( 305 ) is positioned entirely behind a bottom surface of the cathode ( 309 ), wherein the bottom surface of the cathode ( 309 ) is opposite the evaporating surface of the cathode ( 309 ),

an anode ( 303 ) configured to absorb electrons extracted out of the cathode ( 309 ) during an evaporation process, and

a voltage source configured to put the anode ( 303 ) at positive potential relative to the cathode ( 309 ),

wherein the anode ( 303 ) is ring-shaped and includes an inner surface disposed adjacent to and facing an outer peripheral edge of the cathode ( 309 ) such that the cathode ( 309 ) is at least partially encircled by the inner surface of the anode ( 303 ) and wherein the inner surface of the anode ( 303 ) is parallel to the outer peripheral edge of the cathode ( 309 ) and the evaporating surface of the cathode ( 309 ) is in a plane that perpendicularly intersects a plane of the inner surface of the anode ( 303 ) and a portion of the anode ( 303 ) extends past the plane that the evaporating surface of the cathode ( 309 ) is in, and

the anode ( 303 ) is designed and arranged in combination with the magnetic field generated by the magnetic means ( 305 ) such that magnetic field lines ( 311 b ) are led from the evaporating surface of the cathode ( 309 ) to the anode ( 303 ) in a connection wherein the magnetic field lines ( 311 b ) hit the inner surface of the anode ( 303 ) at an angle within a range of greater than 45° and essentially 90° , the connection including

magnetic field lines ( 311 b ) having a component parallel to the evaporating srface of the cathode that is larger than a component of the magnetic field lines ( 311 b ) perpendicular to the evaporating surface of the cathode, and

the magnetic field lines ( 311 b ) exiting from around a central portion of the evaporating surface of the cathode ( 309 ) and having components parallel to the evaporating surface of the cathode ( 309 ) enabling the connection to the anode ( 303 ) from around the central portion of the evaporating surface of the cathode, and

the anode ( 303 ) in combination with the magnetic field generated by the magnetic means ( 305 ) is placed in a vicinity of the cathode ( 309 ) so that magnetic field lines ( 311 b ) enable a current path ( 307 ) in a direct line from an arc spot ( 315 ) to the anode ( 303 ),

wherein the anode is configured to create the connection when a predetermined voltage and magnetic field are applied and wherein a majority of the magnetic field lines ( 311 b ) with exception of central magnetic field lines ( 311 a ) lead to the anode ( 303 ), and

wherein the anode ( 303 ) and the cathode ( 309 ) are components separate from a vacuum chamber.

2. Arc deposition according to claim 1 , wherein the inner surface of the anode ( 303 ) is arranged in relation to the outer peripheral edge of the cathode ( 309 ) such that the magnetic field lines ( 311 b ) that hit the anode ( 303 ) run essentially parallel to electric field lines that hit the anode ( 303 ).

3. Arc deposition device according to claim 1 , wherein magnetic field lines ( 311 a ) exiting the central portion of the evaporating surface of the cathode ( 309 ) run perpendicular to the evaporating surface to prevent erosion of the central area of the evaporating surface of the cathode ( 309 ).

4. Arc deposition device according to claim 3 , further comprising a shutter in the central area of the evaporating surface of the cathode ( 309 ).

5. Vacuum treatment device with a vacuum chamber and a substrate holder and with an arc deposition device according to claim 1 .

6. Vacuum treatment chamber according to claim 5 , wherein the cathode ( 309 ) of the arc deposition device is kept in relation to the vacuum chamber on one potential that is floating, at the same polarity or positive.

7. An arc deposition device, comprising:

a cathode comprising an evaporating surface having material that is to be evaporated and a spot configured to release electrons upon ignition of an arc;

magnetic means configured to generate a magnetic field over the evaporating surface of the cathode and a plurality of magnetic field lines ( 311 ) exiting from the evaporating surface of the cathode, wherein the magnetic field comprises magnetic field lines ( 311 ) exhibiting components parallel and perpendicular to the evaporating surface of the cathode and wherein the magnetic means ( 305 ) is positioned entirely behind a bottom surface of the cathode ( 309 ), wherein the bottom surface of the cathode ( 309 ) is opposite the evaporating surface of the cathode ( 309 );

a voltage source for putting the anode at positive potential relative to the cathode, and

a ring-shaped anode ( 303 ) including an inner surface disposed adjacent to and facing an outer peripheral edge of the cathode ( 309 ) wherein the inner surface of the anode ( 303 ) is parallel to the outer peripheral edge of the cathode ( 309 ) and the evaporating surface of the cathode ( 309 ) is in a plane that perpendicularly intersects a plane of the inner surface of the anode ( 303 ) and a portion of the anode ( 303 ) extends past the plane that evaporating surface of the cathode ( 309 ) is in, the inner surface of the anode ( 303 ) connected with the cathode by the plurality of the magnetic field lines ( 311 b ) extending from the evaporating surface of the cathode ( 309 ) to the inner surface of the anode ( 303 ) in a connection wherein the magnetic field lines ( 311 b ) hit the inner surface of the anode ( 303 ) at an angle within a range of greater than 45° and essentially 90° , the connection including

magnetic field lines ( 311 b ) having a component parallel to the evaporating surface of the cathode that is larger than a component of the magnetic field lines ( 311 b ) perpendicular to the evaporating surface of the cathode, and

the magnetic field lines ( 311 b ) exiting from around a central portion of the evaporating surface of the cathode ( 309 ) and having components parallel to the evaporating surface of the cathode ( 309 ) enabling the connection to the anode ( 303 ) from around the central portion of the evaporating surface of the cathode, and

the anode ( 303 ) in combination with the magnetic field generated by the magnetic means ( 305 ) is placed in a vicinity of the cathode ( 309 ) so that magnetic field lines ( 311 b ) enable a current path ( 307 ) in a direct line from an arc spot ( 315 ) to the anode ( 303 ),

wherein the anode is configured to create the connection when a predetermined voltage and magnetic field are applied and wherein a majority of the magnetic field lines ( 311 b ) with exception of central magnetic field lines ( 311 a ) lead to the anode ( 303 ), and

wherein the anode ( 303 ) and the cathode ( 309 ) are components separate from a vacuum chamber.

8. The device according to claim 7 , wherein the magnetic field lines ( 311 b ) are configured to enable a travel path of the electrons released from areas of the evaporating surface of the cathode other than the central portion of the evaporating surface of the cathode to be in a direct line from the evaporating surface of the cathode to the anode.

9. The device according to claim 7 , wherein the anode is placed within a direct vicinity of the cathode.

10. The device according to claim 7 , wherein a plurality of the magnetic field lines ( 311 a ) that exit the evaporating surface of the cathode from the central portion of the evaporating surface of the cathode run perpendicular to the evaporating surface of the cathode.