Electroluminescent organic transistor
View Patent ↗The present invention relates to a field effect electroluminescent ambipolar organic transistor in which there are two couples of control electrodes, a layer of ambipolar organic semiconductor in direct contact with the source and the drain electrode and two separate dielectric layers, and wherein said dielectric layers are each arranged between the ambipolar organic semiconductor layer and a couple of control electrodes.
1. An electroluminescent organic transistor, comprising:
at least one layer of ambipolar organic semiconductor suitable for transport and radiative recombination of charges of a first type and of a second type;
a source electrode suitable for injection of said charges of a first type;
a drain electrode suitable for injection of said charges of a second type;
said source electrode and said drain electrode being in contact with said at least one layer of ambipolar organic semiconductor ;
a first control electrode and a second control electrode;
a first layer of dielectric material positioned between said at least one layer of ambipolar organic semiconductor and said first control electrode and said second control electrode;
a third control electrode and a fourth control electrode; and
a second layer of dielectric material positioned between said layer at least one layer of ambipolar organic semiconductor and said third control electrode and said fourth control electrode; wherein
said source electrode and said drain electrode lie on a plane that is substantially parallel to a plane on which said at least one layer of ambipolar organic semiconductor lies.
2. The electroluminescent organic transistor according to claim 1 , wherein said source electrode and said drain electrode are both in contact with said first layer of dielectric material or with said second layer of dielectric material.
3. The electroluminescent organic transistor according to claim 1 , wherein a thickness of said at least one layer of ambipolar organic semiconductor is between 10 nm and 150 nm.
4. The electroluminescent organic transistor according to claim 3 , wherein the thickness of said at least one layer of ambipolar organic semiconductor is between 40 nm and 100 nm.
5. The electroluminescent organic transistor according to claim 1 , wherein said ambipolar organic semiconductor is selected from the group consisting of oligoacenes, oligothiophenes, oligofluorenes, pyrimidine derivatives of oligothiophenes, carbonyl derivatives of oligothiophenes, tetrathiophenes asymmetrically substituted in cc and co positions with alkyl and perfluorinated chains, oligothiophenes with thiazole core, polyfluorene copolymers, poly(p-phenylene-vinylene) derivatives, poly(9,9-dioctylfluorene) derivatives and poly(9,9-dioctylfluorene-benzothiadiazole) derivatives.
6. The electroluminescent organic transistor according to claim 5 , wherein said ambipolar organic semiconductor is selected from the group consisting of carbonyl derivatives of oligothiophenes, fluorene derivatives and poly(p-phenylene-vinylene) derivatives.
7. The electroluminescent organic transistor according to claim 1 , wherein said drain electrode and said source electrode are formed of a material selected from the group consisting of indium and tin oxide (ITO), gold, copper, silver, aluminum, calcium, magnesium, chromium, iron and poly(3,4-ethylenedioxythiophene) combined with poly(styrenesulfonate) (PEDOT:PSS).
8. The electroluminescent organic transistor according to claim 1 , wherein said control electrodes are formed of at least one material selected from the group consisting of indium and tin oxide (ITO), gold, copper, silver and aluminum.
9. The electroluminescent organic transistor according to claim 1 , wherein said first layer of dielectric material and said second layer of dielectric material are formed of a material selected from the group consisting of silicon dioxide, polymethylmethacrylate (PMMA), zinc oxide, alumina, zirconium dioxide, hafnium dioxide, fluoropolymers, polyvinyl alcohol (PVA) and polystyrene (PS).