SCR apparatus and method for adjusting the sustaining voltage
View Patent ↗An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.
1. An SCR device, comprising:
an SCR structure and an LDMOS; and
a first N injection region,
wherein the SCR structure comprises a P+ injection region, a P well, an N well and a first N+ injection region that is within the P well,
the LDMOS comprises a second N+ injection region, a FOX, a POLY, and the first N+ injection region, and
the first N injection region is located under the P+ injection region of the SCR structure and the second N+ injection region of the LDMOS, disposed between both of the P+ injection region and the second N+ injection region and the N well, and contacting the P well.
2. The SCR device according to claim 1 , further comprising a second N injection region at a drifting region of the LDMOS, the second N injection region being located under the FOX, between the FOX and the P well, and connected to the first N injection region under the second N+ injection region.
3. A method for adjusting a sustaining voltage for an SCR device, comprising:
providing a SCR structure comprising a P+ injection region, a P well, an N well and a first N+ injection region that is within the P well;
providing an LDMOS comprising a second N+ injection region, a FOX, a POLY, and the first N+ injection region;
providing a first N injection region locating under the P+ injection region of the SCR structure and the second N+ injection region of the LDMOS, disposed between both of the P+ injection region and the second N+ injection region and the N well, and contacting the P well;
adjusting the dosage of the first N injection region.
4. A method for adjusting a sustaining voltage for an SCR device, comprising:
providing a SCR structure comprising a P+ injection region, a P well, an N well and a first N+ injection region that is within the P well;
providing an LDMOS comprising a second N+ injection region, a FOX, a POLY, and the first N+ injection region;
adjustably forming an N injection region, with a predetermined depending injection energy and doping concentration, under the P+ injection region of the SCR structure and the second N+ injection region of the LDMOS, disposed between both of the P+ injection region and the second N+ injection region and the N well, and contacting the P well.
5. The method according to claim 4 , wherein the first N injection region is located under the P+ injection region and the second N+ injection region, and the first N injection region is adjacent to the P well and the N well.