Hermetically sealed electronic device using solder bonding

1. A method of hermetically sealing an active layer, comprising

a. forming on a first substrate an integral preformed edge,

b. positioning on the first substrate an active layer,

c. positioning a second substrate in close contact with the active layer, leaving a gap between preformed edge and an edge of the active layer,

d. adding a seal material to the gap, and

e. applying an energy source to heat and flow the seal material to fully fill the gap thereby forming a seal therein, and

f. applying the first substrate material to the top substrate and firing the material to sinter it, thereby forming an integral preformed edge.

2. A method of hermetically sealing an active layer, comprising

a. forming on a first substrate an integral preformed edge,

b. positioning on the first substrate an active layer,

c. positioning a second substrate in close contact with the active layer, leaving a gap between preformed edge and an edge of the active layer,

d. adding a seal material to the gap, and

e. applying an energy source to heat and flow the seal material to fully fill the gap thereby forming a seal therein,

wherein the preformed edge and first substrate are formed by cutting and shaping a block of substrate material to become preformed edge integral with the top substrate, and

wherein the firing is undertaken during a tempering cycle.

3. The method of claim 1 wherein the active layer is selected from the group consisting of solar cell, solar cell contact, organic PV device, plasma display devices, nanocrystal display, electrochromic device, electrochromic material system, suspended particle device, micro-blind, liquid crystal device, smart window, switchable window, smart glass, eglass, LED, SED, FED, OLED, LCD, DLP, FLD, IMOD, TDEL, QDLED, TMOS, TPD, LCL, LPD, or OLET.

4. A method of hermetically sealing an active layer, comprising

a. forming on a first substrate an integral preformed edge,

b. positioning on the first substrate an active layer,

c. positioning a second substrate in close contact with the active layer, leaving a gap between preformed edge and an edge of the active layer,

d. adding a seal material to the gap, and

e. applying an energy source to heat and flow the seal material to fully fill the gap thereby forming a seal therein,

wherein the seal material is a solder material comprising a metal selected from the group consisting of Pb, Sn, Bi, In, Ag, Zn, Sb, Cu and combinations thereof.

5. A method of hermetically sealing an active layer, comprising

a. forming on a first substrate an integral preformed edge,

b. positioning on the first substrate an active layer,

c. positioning a second substrate in close contact with the active layer, leaving a gap between preformed edge and an edge of the active layer,

d. adding a seal material to the gap, and

e. applying an energy source to heat and flow the seal material to fully fill the gap thereby forming a seal therein,

wherein the seal material is a lead-free solder comprising metals selected from the group consisting of Sn—Ag, Sn—Ag—Bi, Sn—Ag—Cu, Sn—Cu, Sn—Ag—Cu—Sb, Sn—Bi, and Sn—Zn—Bi.

6. The method of claim 5 , wherein the solder further comprises an element selected from the group consisting of Ti, Zr, V, Nb, Hf, and combinations thereof.

7. The method of claim 1 , wherein the substrates may be the same or different, and are selected from the group consisting of glass, coated glass, ceramic, or metal.

8. A method of hermetically sealing an active layer, comprising

a. forming on a first substrate an integral preformed edge,

b. positioning on the first substrate an active layer,

c. positioning a second substrate in close contact with the active layer, leaving a gap between preformed edge and an edge of the active layer,

d. adding a seal material to the gap, and

e. applying an energy source to heat and flow the seal material to fully fill the gap thereby forming a seal therein,

wherein the substrates are coated with at least one selected from the group consisting of indium tin oxide, aluminum doped zinc oxide, metals, metallic oxides, antireflective coatings, SiN X coatings, Si 3 N 4 coatings, and combinations thereof.

9. The method of claim 8 , wherein the substrates are coated by a procedure selected from the group consisting of sputtering, CVD, reduction from metallic salts and combinations thereof.

10. The method of claim 1 , further comprising after (b) and before (c), (b1) laminating a polymer film to at least one of the active layer, the first substrate and a second substrate.

11. The method of claim 1 , wherein at least one substrate is glass.

12. The method of claim 1 , wherein the energy source is localized and selected from the group consisting of ultrasound, visible light, ultraviolet light, broadband infrared, laser, induction, and combinations thereof.

13. The method of claim 1 , wherein the energy source is dispersed, and selected from the group consisting of thermal heating, magnetic induction heating, convection furnace, and eddy currents.

14. The method of claim 1 , wherein the preformed edge and first substrate are formed by cutting and shaping a block of substrate material to become preformed edge integral with the top substrate.

15. The method of claim 4 , further comprising after (b) and before (c), (b1) laminating a polymer film to at least one of the active layer, the first substrate and a second substrate.

16. The method of claim 4 , wherein at least one substrate is glass.

17. The method of claim 4 , wherein the energy source is localized and selected from the group consisting of ultrasound, visible light, ultraviolet light, broadband infrared, laser, induction, and combinations thereof.

18. The method of claim 4 , wherein the energy source is dispersed, and selected from the group consisting of thermal heating, magnetic induction heating, convection furnace, and eddy currents.

19. The method of claim 4 , wherein the preformed edge and first substrate are formed by cutting and shaping a block of substrate material to become preformed edge integral with the top substrate.