Indium oxoalkoxides for producing coatings containing indium oxide

1. A halogenated indium oxo alkoxide of formula In 7 O 2 (OH)(OR) 12 X 4 (ROH) x

wherein R is C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl,

X is F, Cl, Br, or I, and

x is from 0 to 10.

2. The indium oxo alkoxide according to claim 1 , of formula:

In 7 (μ 4 -O) 2 (μ 2 -OH)(μ 1 -OEt) 3 (μ 2 -OEt) 7 (μ 3 -OET) 2 (μ 1 -Cl) 4 .

3. A process of preparing the indium oxo alkoxide according to claim 1 , the process comprising:

reacting a reaction mixture comprising an indium(III) halide InX 3 , a sodium or potassium isopropoxid; and isopropanol and optionally filtering off an intermediate solid and washing the intermediate solid with isopropanol, thereby obtaining an isopropanol-comprising wash solution,

removing isopropanol from the reaction mixture, the isopropanol-comprising wash solution, or both, thereby obtaining a solid,

taking up the solid obtained after removing isopropanol in an alcohol ROH, thereby obtaining a mixture,

optionally filtering the mixture obtained in taking up the solid, and

crystallizing the indium oxo alkoxide out of the mixture obtained in taking up the solid.

4. The process of claim 3 ,

wherein the indium(III) halide InX 3 is InCl 3 and

the alcohol is selected from the group consisting of CH 3 OH, HOCH 2 CH 3 , HOCH 2 CH 2 CH 3 , HOCH(CH 3 ) 2 , HOCH 2 CH 2 CH 2 CH 3 , HOCH(CH 3 )(CH 2 CH 3 ) and HOC(CH 3 ) 3 .

5. A coating, comprising:

the indium oxo alkoxide according to claim 1 .

6. The coating according to claim 5 , obtained by a process comprising depositing the coating from nonaqueous solution.

7. A liquid coating composition, comprising:

the indium oxo alkoxide according to claim 1 .

8. An electronic component, comprising:

the indium oxo alkoxide according to claim 1 .

9. The process of claim 3 , wherein the process comprises filtering the mixture obtained in taking up the solid.

10. The electronic component of claim 8 , wherein the component is a transistor, a display, an RFID tag, a circuit, a diode, a sensor, or a solar cell.

11. The process of claim 3 , wherein a molar ratio of the sodium or potassium isopropoxide to the indium(III) halide InX 3 in the reacting is from 2.0:1 to 2.51:1.

12. The process of claim 11 , wherein the molar ratio of the sodium or potassium isopropoxide to the indium(III) halide InX 3 in the reacting is from 2.4:1 to 2.5:1.

13. The process of claim 3 , wherein a molar ratio of the isopropanol to the indium(III) halide InX 3 in the reacting is from 5:1 to 3000:1.

14. The process of claim 13 , wherein the molar ratio of the isopropanol to the indium(III) halide InX 3 in the reacting is from 15:1 to 100:1.

15. The process of claim 3 , wherein the reaction mixture comprises, as precursors, only precursors that comprise indium.

16. The process of claim 3 , wherein the reaction mixture further comprises a precursor comprising a metal other than indium in a 0 oxidation state or a metal oxide precursor comprising a metal other than indium.

17. An anhydrous composition, comprising:

the halogenated indium oxo alkoxide of claim 1 , and

a solvent.

18. The composition of claim 17 , wherein a content of the alkoxide is from 0.1 to 15% by weight, based on a total mass of the composition.

19. The composition of claim 17 , wherein a viscosity of the composition is from 1 to 10 mPa·s determined to DIN 53019 parts 1 to 2 and measured at 20° C.