Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
View Patent ↗The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
1. A method of producing graphene comprising:
loading a substrate into a deposition chamber using a first roll-to-roll process;
forming a metal catalyst layer on the substrate in the deposition chamber;
loading the substrate from the deposition chamber into an inductively coupled plasma-chemical vapor deposition (ICP-CVD) chamber using a second roll-to-roll process after the metal catalyst layer is formed on the substrate;
supplying carbon source-containing gas to the substrate in the ICP-CVD chamber; and
forming, within the ICP-CVD chamber, graphene on the metal catalyst layer formed on the substrate from the carbon source-containing gas, at a low temperature of 500° C. or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).
2. The producing method of claim 1 ,
wherein the substrate is loaded in sequence from the deposition chamber into the ICP-CVD chamber by using a load-locked chamber.
3. The producing method of claim 1 , wherein the substrate has transparency or flexibility, or transparency and flexibility.
4. The producing method of claim 1 , wherein the substrate is a polymer sheet containing a polymer compound having π-electrons or includes the polymer sheet.
5. The producing method of claim 1 , further including:
cooling the graphene.
6. The producing method of claim 1 , wherein the metal catalyst layer for growing graphene is patterned.
7. The producing method of claim 1 , further including:
separating the graphene in a sheet form from the substrate by removing the metal catalyst layer after the graphene is formed.
8. The producing method of claim 7 , wherein the metal catalyst layer for growing graphene is removed through an etching process using an etching solution including an acid, a salt FeCl 3 or combinations thereof.
9. The producing method of claim 8 , wherein the metal catalyst layer for growing graphene is removed through a roll-to-roll process.