Thermal airlflow sensor
View Patent ↗An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film 4 , formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide film 4 more than that before the ion implantation.
1. A thermal airflow sensor comprising: a semiconductor substrate; an electric insulator formed on the semiconductor substrate and including a resistance heating element, a resistance temperature detector, and a silicon oxide film; and a diaphragm formed by removing a part of the semiconductor substrate, the resistance heating element and the resistance temperature detector being formed on the diaphragm, and the silicon oxide film formed as the electric insulator being formed on the resistance heating element and the resistance temperature detector, wherein
the silicon oxide film has an upper layer and a lower layer, and an ion implantation is applied to the upper layer.
2. The thermal airflow sensor according to claim 1 , wherein an ion implantation layer is formed on at least a certain region on the surface of the silicon oxide film in the thickness direction.
3. The thermal airflow sensor according to claim 2 , comprising:
a thermal oxide film formed on the semiconductor substrate by thermally oxidizing silicon; the resistance heating element and the resistance temperature detector formed on the thermal oxide film; and the silicon oxide film formed on the resistance heating element and the resistance temperature detector and exposed to the surface, wherein
the concentration of the atom contained in the ion implantation layer becomes higher than the concentration of atom contained in the thermal oxide film.
4. The thermal airflow sensor according to claim 2 , wherein
the silicon oxide film is formed by a CVD method, the ion implantation layer is formed on the surface of the silicon oxide film, and a silicon oxide film retaining the composition before the ion implantation is present on an interface with a layer under the silicon oxide film.
5. The thermal airflow sensor according to claim 2 , wherein
an ion implanted into the ion implantation layer contains an atom or molecule of at least any one of silicon, oxygen, and an inert element.
6. The thermal airflow sensor according to claim 5 , wherein
the inert element contains at least either one of argon and nitrogen.
7. The thermal airflow sensor according to claim 2 , wherein
the ion implantation layer is formed only on a region covering the diaphragm, and a region where the ion implantation is not applied is formed at the outside of the diaphragm.