Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

1. A radiation-emitting semiconductor chip comprising:

a carrier;

a semiconductor body disposed on the carrier and having a semiconductor layer sequence that includes an active region configured to generate radiation, an n-conducting region and a cover layer disposed on a side of the n-conducting region facing away from the active region; and

a contact structure for contacting the n-conducting region disposed on the cover layer, wherein the cover layer has a cut-out through which the contact structure extends to the n-conducting region, wherein the contact structure has a contact surface on a side facing away from the active region, wherein the contact surface overlaps in a plan view of the semiconductor chip with the cut-out, and wherein the contact surface has a protrusion or a depression.

2. The radiation-emitting semiconductor chip according to claim 1 , wherein the cover layer delimits the semiconductor body in a vertical direction and is lattice-matched to the n-conducting region on the side facing the n-conducting region.

3. The radiation-emitting semiconductor chip according to claim 1 , wherein the cover layer has a doping concentration of at most 1*10 17 cm −3 .

4. The radiation-emitting semiconductor chip according to claim 3 , wherein the cover layer is undoped.

5. The radiation-emitting semiconductor chip according to claim 1 , wherein the carrier is disposed on a side of the active region facing away from the n-conducting region and is cohesively connected to the semiconductor body.

6. The radiation-emitting semiconductor chip according to claim 1 , further comprising a coating disposed over a side surface of the cut-out.

7. The radiation-emitting semiconductor chip according to claim 6 , wherein the coating contains a dielectric material.

8. The radiation-emitting semiconductor chip according to claim 1 , wherein the contact structure has the contact surface for a wire bond connection.

9. The radiation-emitting semiconductor chip according to claim 8 , wherein the cut-out extends at least in regions along a periphery of the contact surface in the plan view of the semiconductor chip.

10. The radiation-emitting semiconductor chip according to claim 8 , wherein the cover layer has a plurality of cut-outs in which the contact structure adjoins the n-conducting region and wherein at least two of the cut-outs overlap with the contact surface in the plan view of the semiconductor chip.

11. The radiation-emitting semiconductor chip according to claim 10 , wherein the contact surface has a pattern with protrusions and/or depressions, the pattern following the cut-outs.

12. The radiation-emitting semiconductor chip according to claim 1 , wherein the cover layer has a plurality of cut-outs in which the contact structure adjoins the n-conducting region.

13. The radiation-emitting semiconductor chip according to claim 1 , wherein a first portion of the cover layer is structured and wherein a second portion of the cover layer in which the contact structure is formed is unstructured.

14. A method for producing a plurality of semiconductor chips, the method comprising:

providing a semiconductor layer sequence on a substrate, the semiconductor layer sequence comprising a cover layer, an active region configured to generate radiation, and an n-conducting region;

attaching the semiconductor layer sequence to a carrier;

removing the substrate;

forming cut-outs in the cover layer;

forming a contact structure on the cover layer, wherein the contact structure extends into the cut-outs, wherein the contact structure has contact surfaces on a side facing away from the active region, wherein the contact surfaces overlap in a plan view of the semiconductor chips the cut-outs, and wherein the contact surfaces have protrusions or depressions; and

separating the semiconductor layer sequence with the carrier into the plurality of semiconductor chips, so that each semiconductor chip has at least one of the cut-outs.

15. The method according to claim 14 , wherein forming the contact structure comprises depositing the contact structure using a galvanic process.