Quantum dots and hosts

1. An electronic device comprising a cathode, an anode, an emissive layer, and a hole injection layer or charge generation layer deposited between the anode and the emissive layer, wherein the emissive layer comprises at least one quantum dot and at least one organic host material and wherein the ionization potential or the valence band (VB) of the quantum dot is at least 0.3 eV higher than the HOMO of the organic host,

and wherein the host material is at least one element selected from a host material having a bigger band gap than the quantum dot,

an organic compound having a HOMO at least lower than −5.7 eV, and an

organic compound having a LUMO at least lower than −3.0 eV and

the host material is a polymer comprising at least one repeating unit of the formula (1), (2), (3) or (4)

wherein

Ar 8 and Ar 9 independently of each other denote a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group,

X 3 and X 4 independently of each other denote O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

X 5 and X 6 independently of each other denote N, B, P, C(R 1 ) or Si(R 1 ),

R 1 and R 2 are independently of each other identical or different groups selected from H, halogen, —CN, —NC, —NCO, —NCS, —OCN,

—SCN, —C(═O)NR 0 R 00 , —C(═O)X, —C(═O)R 0 , —NH 2 , —NR 0 R 00 ,

—SH, —SR 0 , —SO 3 H, —SO 2 R 0 , —OH, —NO 2 , —CF 3 , —SF 5 , optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally includes one or more hetero atoms, and optionally the groups R 1 and R 2 form a spiro group with the fluorene moiety to which they are attached,

X is halogen,

R 0 and R 00 are independently of each other H or an optionally substituted carbyl or hydrocarbyl group optionally including one or more hetero atoms,

X 3 and Ar 9 are bonded to adjacent carbon atoms in the aromatic ring of Ar 9 ,

X 4 and Ar 8 are bonded to adjacent carbon atoms in the aromatic ring of Ar 9 ,

X 5 and Ar 9 are bonded to adjacent atoms in the aromatic ring of Ar 8 , and

X 6 and Ar 8 are bonded to adjacent atoms in the aromatic ring of Ar 9 ,

Ar′ and Ar″ denote an aromatic hydrocarbon group or heterocyclic group;

one of X 7 and X 8 denotes C(═O) or C(R 1 )(R 2 ) and the other denotes O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

Q is X 9 , X 9 —X 10 or X 11 ═X 12 ,

X 9 and X 10 denote independently of each other O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

X 11 and X 12 denote independently of each other N, B, P, C(R 1 ) or Si(R 1 ),

Z denotes —CR 1 ═CR 2 — or —C≡C—,

z is 0 or 1,

R 1 is as defined above,

R 2 is as defined above,

M 0 is in case of multiple occurrence independently of one another an aromatic, heteroaromatic or non-aromatic ring system having 2 to 40 C atoms, which is unsubstituted or substituted with one or more identical or different groups R 1 ,

K 1 , K 2 and Y are in case of multiple occurrence independently of one another a bridging group forming a cyclic system with M, selected from B(R 1 ), C(R 1 ) 2 , Si(R 1 ) 2 , C═O, C═S, C═Se, C═Te, C═NR 1 , C═C(R 1 ) 2 , O, S, S═O, SO 2 , S(R 1 ) 2 , N(R 1 ), P(R 1 ), P(═O)R 1 , P(═S)R 1 , C≡C or a combination or one, two, three or four of these groups,

J is a linkage group to the polymer, and may also be a substituted or unsubstituted C—C-double or triple bond, a substituted aromatic or heteroaromatic or non-aromatic cyclic ring system having 2 to 40 C atoms, which is unsubstituted or substituted with one or more identical or different groups R 1 ,

R 1 is as defined above,

x, y and p are in case of multiple occurrence independently of one another 0 or 1, with the proviso that at least one of x and y is 1,

q is an integer ≧1.

2. The electronic device according to claim 1 , wherein the charge generation layer or hole injection layer has a working function or electron affinity higher than 5.6 eV, and/or wherein the hole injection layer or charge generation layer comprises at least one element selected from a transition metal oxide, vanadium oxide (VO x ), molybdenum oxide (MoO x ), ruthenium oxide (RuO x ) and tungsten oxide (WO x ).

3. The electronic device according claim 1 , wherein the or the electron affinity or conduction band of the quantum dot is at least 0.3 eV lower than the LUMO of the host material.

4. The electronic device according claim 1 , wherein the ionisation potential or the valence band (VB) of the quantum dot is at least 0.5 eV higher than the HOMO of the organic host, or the electron affinity or conduction band of the quantum dot is at least 0.5 eV lower than the LUMO of the host material.

5. The electronic device according claim 1 , wherein the quantum dot has a valence band higher than −5.7 eV.

6. The electronic device according to claim 1 , wherein the quantum dot comprises at least one element selected from Group II-VI, Group III-V, Group IV-VI and Group IV semiconductors.

7. The electronic device according to claim 1 , wherein the quantum dot comprises ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, or a combination of two or more such semiconductors, and/or with core/shell, core multi-shell layered-structures thereof.

8. The electronic device according to claim 1 , wherein the concentration of the quantum dot is chosen such that the quantum dot works as hole trap or electron trap in the organic host, and is from 0.5 to 20 vol %.

9. The electronic device according to claim 1 , comprising

at least one further organic emitter, or

at least one further organic emitter having an absorption spectrum overlapping with an emission spectrum of the quantum dot.

10. The electronic device according to claim 1 , wherein the device is selected from a light emitting device, a light converting device, a light harvesting device, a photovoltaic device, a photo-diode, a light sensor device, an organic light emitting diode (OLED), a polymer light emitting diode (PLED), an organic light emitting electrochemical cell, an organic field effect transistor (OFET), a thin film transistor (TFT), an organic solar cell (O-SC), an organic laser diode (O-laser), an organic integrated circuit (O-IC), a radio frequency identification (RFID) tag, a photodetector, a sensor, a logic circuit, a memory element, a capacitor, a charge injection layer, a Schottky diode, a planarising layer, an antistatic film, a conducting substrate or pattern, a photoconductor, an electrophotographic element, an organic light emitting transistor (OLET), an organic spintronic device, and an organic plasmon emitting device (OPEDs).

11. The electronic device according claim 1 , wherein the ionisation potential or the valence band (VB) of the quantum dot is at least 0.4 eV higher than the HOMO of the organic host.

12. The electronic device according claim 1 , wherein the host material is a polymer comprising at least one repeating unit of the formula

13. The electronic device according claim 1 , wherein the host material is a polymer comprising at least one repeating unit of the formula

14. The electronic device according claim 1 , wherein the host material is a polymer comprising at least one repeating unit of the formula (4) which is selected from the following formula

15. The electronic device according claim 1 , wherein the concentration of the quantum dot is from 5 to 15% wt %.

16. A mixture comprising at least one quantum dot and one organic host, wherein the ionisation potential or the valence band of the quantum dot is at least 0.3 eV higher than the HOMO of the organic host and the organic host material is a polymer comprising at least one repeating unit of the formula (1), (2), (3) or (4)

wherein

Ar 8 and Ar 9 independently of each other denote a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group,

X 3 and X 4 independently of each other denote O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

X 5 and X 6 independently of each other denote N, B, P, C(R 1 ) or Si(R 1 ),

R 1 and R 2 are independently of each other identical or different groups selected from H, halogen, —CN, —NC, —NCO, —NCS, —OCN,

—SCN, —C(═O)NR 0 R 00 , —C(═O)X, —C(═O)R 0 , —NH 2 , —NR 0 R 00 ,

—SH, —SR 0 , —SO 3 H, —SO 2 R 0 , —OH, —NO 2 , —CF 3 , —SF 5 , optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally includes one or more hetero atoms, and optionally the groups R 1 and R 2 form a spiro group with the fluorene moiety to which they are attached,

X is halogen,

R 0 and R 00 are independently of each other H or an optionally substituted carbyl or hydrocarbyl group optionally including one or more hetero atoms,

and wherein

X 3 and Ar 9 are bonded to adjacent carbon atoms in the aromatic ring of Ar 9 ,

X 4 and Ar 8 are bonded to adjacent carbon atoms in the aromatic ring of Ar 9 ,

X 5 and Ar 9 are bonded to adjacent atoms in the aromatic ring of Ar 8 , and

X 6 and Ar 8 are bonded to adjacent atoms in the aromatic ring of Ar 9 ,

Ar′ and Ar″ denote an aromatic hydrocarbon group or heterocyclic group;

one of X 7 and X 8 denotes C(═O) or C(R 1 )(R 2 ) and the other denotes O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

Q is X 9 , X 9 —X 10 or X 11 ═X 12 ,

X 9 and X 10 denote independently of each other O, S, C(═O), S(═O), SO 2 , C(R 1 )(R 2 ), Si(R 1 )(R 2 ), N(R 1 ), B(R 1 ), P(R 1 ) or P(═O)(R 1 ),

X 11 and X 12 denote independently of each other N, B, P, C(R 1 ) or Si(R 1 ),

Z denotes —CR═CR 2 — or —C≡C—,

z is 0 or 1,

R 1 is as defined above,

R 2 is as defined above,

M 0 is in case of multiple occurrence independently of one another an aromatic, heteroaromatic or non-aromatic ring system having 2 to 40 C atoms, which is unsubstituted or substituted with one or more identical or different groups R 1 ,

K 1 , K 2 and Y are in case of multiple occurrence independently of one another a bridging group forming a cyclic system with M, selected from B(R 1 ), C(R 1 ) 2 , Si(R 1 ) 2 , C═O, C═S, C═Se, C═Te, C═NR 1 , C═C(R 1 ) 2 , O, S, S═O, SO 2 , S(R 1 ) 2 , N(R 1 ), P(R 1 ), P(═O)R 1 , P(═S)R 1 , C≡C or a combination or one, two, three or four of these groups,

J is a linkage group to the polymer, and may also be a substituted or unsubstituted C—C-double or triple bond, a substituted aromatic or heteroaromatic or non-aromatic cyclic ring system having 2 to 40 C atoms, which is unsubstituted or substituted with one or more identical or different groups R 1 ,

R 1 is as defined above,

x, y and p are in case of multiple occurrence independently of one another 0 or 1, with the proviso that at least one of x and y is 1,

q is an integer ≧1.

17. The mixture according to claim 16 , wherein the organic host has a bigger band gap than the quantum dot.

18. The mixture according to claim 16 , wherein

the quantum dot has a valence band (VB) higher than higher than −5.7 eV and/or wherein the quantum dot comprises at least one element selected from group consisting of ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, and a combination of two or more such semiconductors,

and/or with core/shell, core multi-shell layered-structures thereof.

19. The mixture according to claim 16 , wherein the concentration of the quantum dot is chosen such that it works as hole trap in the organic host and is from 0.5 to 30 wt %.

20. The mixture according to claim 16 , comprising

at least one further emitter, or

at least one further emitter having an absorption spectrum overlapping with an emission spectrum of the quantum dot, and/or

wherein the at least one further emitter is an organic compound or other quantum dot.

21. An electronic device comprising the mixture according to claim 16 or comprising an anode, a cathode and a functional layer in-between the anode and the cathode, wherein the functional layer comprises the mixture according to claim 16 .

22. A formulation comprising the mixture according to claim 16 .