Optoelectronic semiconductor component and scattering body

1. An optoelectronic semiconductor component comprising:

a plurality of optoelectronic semiconductor chips, and

scattering bodies having different temperature-dependent scattering behavior disposed downstream of at least two of the semiconductor chips, wherein the scattering bodies comprise a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material, wherein

the scattering bodies exclusively cover a radiation main area of the semiconductor chips so that the scattering body is not in contact with a carrier top side of a carrier on which the semiconductor chip is fitted,

a temperature-dependent profile of the refractive index of the matrix material is different from a temperature-dependent profile of the refractive index of the particle material, and

the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.

2. The optoelectronic semiconductor component according to claim 1 , wherein, at a temperature of 300 K, the particle material has a lower refractive index than the matrix material.

3. The optoelectronic semiconductor component according to claim 1 , wherein, at a temperature of 300 K to 450 K, a refractive index of the matrix material decreases as temperature rises.

4. The optoelectronic semiconductor component according to claim 1 , wherein, at a temperature of 300 K to 450 K, the refractive index of the particle material increases as temperature rises.

5. The optoelectronic semiconductor component according to claim 1 , wherein, at a temperature of 300 K to 375 K, the difference in refractive index between the matrix material and the particle material decreases as temperature rises.

6. The optoelectronic semiconductor component according to claim 1 , wherein, at least one temperature of 375 K to 450 K, an average scattering cross section of the scattering particles for radiation generated in the semiconductor chip during operation is at most 25% of the average scattering cross section of the scattering particles at a temperature of 300 K.

7. The optoelectronic semiconductor component according to claim 1 , wherein the difference in refractive index between the matrix material and the particle material is at least 0.02 at a temperature of 300 K and at most 0.01 at a temperature of 400 K.

8. The optoelectronic semiconductor component according to claim 1 , wherein the matrix material comprises or is one of the following materials or a mixture of at least two of the following materials: a silicone, an epoxide, a polyurethane, an acrylate, a polycarbonate.

9. The optoelectronic semiconductor component according to claim 1 , wherein the particle material is transparent and pellucid at a temperature of 300 K to 450 K.

10. The optoelectronic semiconductor component according to claim 1 , wherein the particle material comprises or is one of the following materials or a mixture of at least two of the following materials: a silicon oxide, a metal fluoride.

11. The optoelectronic semiconductor component according to claim 1 , wherein an average diameter of the scattering particles is 0.15 μm to 20 μm.

12. The optoelectronic semiconductor component according to claim 1 , wherein a proportion by weight of the scattering particles in the scattering body is 10% to 50%.

13. The optoelectronic semiconductor component according to claim 1 , wherein

the matrix material is a silicone or a silicone-epoxide hybrid material,

the particle material is glass, BaF 2 , LiF or MgF 2 ,

a proportion by weight of the scattering particles in the scattering body is 20% to 40%,

an average diameter of the scattering particles is 0.2 μm to 5 μm,

the scattering body is a lamina having a thickness of at most 500 μm or a converging lens,

the semiconductor component comprises at least two semiconductor chips which emit in mutually different spectral ranges,

up to a temperature of at least 375 K, proceeding from a temperature of 300 K, the refractive index of the matrix material matches the refractive index of the particle material, and

at least one of the semiconductor chips is based on AlInGaN or on AlInGaP.

14. A light emitting diode comprising:

a plurality of optoelectronic semiconductor chips, and

scattering bodies having different temperature-dependent scattering behavior disposed downstream of at least two of the semiconductor chips, wherein the scattering bodies comprise a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material,

wherein

a temperature-dependent profile of the refractive index of the matrix material is different from a temperature-dependent profile of the refractive index of the particle material,

the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15,

at a temperature of 300 K to 375 K, the difference in refractive index between the matrix material and the particle material decreases as the temperature rises,

at least one temperature of 375 K to 450 K, an average scattering cross section of the scattering particles for radiation generated in the semiconductor chip during operation is at most 25% of the average scattering cross section of the scattering particles at a temperature of 300 K,

the matrix material comprises a phenylized silicone,

the particle material is glass, BaF 2 , Ca F 2 , LiF or MgF 2 , and

an average diameter of the scattering particles is 1.5 μm to 5.