IP Library Patent Application 13820180
Patent Application
App. No. 13/820,180

CONTROL OF DIFFERENTIAL PRESSURE IN PECVD SYSTEMS

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
13/820,180
Abstract

A method and apparatus for manufacturing thin films is described, wherein, in a deposition system comprising an inner non-airtight enclosure for containing at least one substrate, an outer airtight chamber completely surrounding said enclosure, an exhaust operatively connected to both, said inner chamber is kept at a pressure lower than the pressure within said outer enclosure, especially a pressure difference of less than I mbar. The apparatus may exhibit two butterfly vents arranged between inner enclosure, outer chamber and an exhaust for controlling said pressure difference.

Claims (4)

1 ) A method for manufacturing thin films in a deposition system, said system comprising an inner non-airtight enclosure for containing at least one substrate, an outer airtight chamber completely surrounding said enclosure, an exhaust operatively connected to both, keeping said chamber at a pressure lower than the pressure within said enclosure characterized in that, during operation, a pressure difference of less than 1 mbar between inner non-airtight enclosure and outer airtight chamber is being established.

2 ) A method according to claim 1 , wherein it is valid for the differential pressure ΔP=P in −P out between pressure in inner enclosure P in and pressure in outer chamber P out :P out =0.5 P in or P out =0.75 P in or P out =0.95 P in .

3 ) A method according claims 1 , wherein a microcrystalline silicon layer is being deposited at a pressure in the inner non-airtight chamber of 9 mbar and a pressure difference of 0.5 mbar.

4 ) An apparatus for producing thin films using a plasma deposition process comprising an inner non-airtight enclosure in which the prevailing pressure is less than the atmospheric pressure for containing at least one substrate; an outer airtight chamber surrounding said enclosure, said chamber being kept at a pressure lower than the pressure within said enclosure; an exhaust operatively connected to both air-tight enclosure and non-airtight chamber, further comprising at least two butterfly vents, arranged between exhaust and inner and outer chamber respectively for controlling the pressure difference between inner enclosure and outer chamber and configured to establish a pressure difference of less than 1 mbar between inner non-airtight enclosure and outer airtight chamber.

Assignments (2)
LICENSE Recorded Aug 1, 2014
From: TEL SOLAR AG
To: OERLIKON TRADING AG
Reel/Frame 033460/0606 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2013
From: BUGNON, GREGORY
To: TEL SOLAR AG
Reel/Frame 030338/0346 →