Pressed-contact type semiconductor device and method for manufacturing the same
View Patent ↗A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.
1. A method for manufacturing a pressed-contact type semiconductor device which has a semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, and a pair of lead frame members which face the first electrode and the second electrode of the semiconductor element respectively comprising:
forming a metallic porous plating layer on a surface of at least one of the lead frame members, the metallic porous plating layer having a plurality of pores formed such that at least some of the plurality of pores are surrounded on all sides by metal of the metallic porous plating layer, the surface being to face the first electrode or the second electrode of the semiconductor element; and
joining the metallic porous plating layer to the first electrode or the second electrode of the semiconductor element by a pressed contact, the first electrode or the second electrode being made to face the metallic porous plating layer; wherein
a pore of the metallic porous plating layer has a shape in which a length in a pressed-contact direction is longer than a length in a direction that is perpendicular to the pressed-contact direction.
2. The method for manufacturing a pressed-contact type semiconductor device according to claim 1 , wherein
a thickness of the metallic porous plating layer is 10 μm or more and 200 μm or less and a porosity of the metallic porous plating layer is 20% or more and 70% or less.
3. The method for manufacturing a pressed-contact type semiconductor device according to claim 1 , wherein
a thickness of the metallic porous plating layer is 10 μm or more and 200 μm or less and a porosity of the metallic porous plating layer is 20% or more and 70% or less.
4. The method for manufacturing a pressed-contact type semiconductor device according to claim 1 , wherein
the metallic porous plating layer is formed on the surface of the at least one of the lead frame members by electroplating.
5. A pressed-contact type semiconductor device comprising:
a semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed;
a pair of lead frame members which face the first electrode and the second electrode of the semiconductor element respectively; and
a pressure applying member which applies a pressure to the pair of lead frame members while the semiconductor element is sandwiched by the pair of lead frame members,
wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frame members; wherein
a pore of the metallic porous plating part has a shape in which a length in a pressed-contact direction is longer than a length in a direction that is perpendicular to the pressed-contact direction.
6. The pressed-contact type semiconductor device according to claim 5 , wherein
the pressure which is applied by the pressure applying member is less than a pressure which changes the metallic porous plating part into a plastic region from an elastic region.
7. The pressed-contact type semiconductor device according to claim 5 , wherein
the pressure which is applied by the pressure applying member is less than a pressure which destroys the semiconductor element.
8. The pressed-contact type semiconductor device according to claim 5 , wherein
the metallic porous plating part is formed by a nickel porous plating.