Current steering element and non-volatile memory element incorporating current steering element
View Patent ↗A current steering element ( 100 ) formed such that the current steering element covers a lower opening ( 105 ) of a via hole ( 104 ) formed in an interlayer insulating layer ( 102 ), comprises: a corrosion-suppressing layer ( 106 ) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer ( 108 ) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer ( 110 ) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer ( 112 ) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.
1. A method of manufacturing a current steering element comprising the steps of:
forming a lower wire;
forming a first electrode layer such that the first electrode layer is electrically connected to the lower wire;
forming a current steering layer on the first electrode layer such that the current steering layer physically contacts the first electrode layer;
forming a second electrode layer on the current steering layer such that the second electrode layer physically contacts the current steering layer;
forming a corrosion-suppressing layer on the second electrode layer using a material having a higher standard electrode potential than a material of the second electrode layer;
forming an interlayer insulating layer such that the interlayer insulating layer covers the corrosion-suppressing layer, the second electrode layer, the current steering layer and the first electrode layer;
forming a via hole in the interlayer insulating layer such that an entire portion of the lower opening of the via hole opens on the corrosion-suppressing layer; and
washing an interior of the via hole using a washing liquid containing water.
2. A method of manufacturing a current steering element comprising the steps of:
forming a lower wire;
forming a first electrode layer such that the first electrode layer is electrically connected to the lower wire;
forming a current steering layer on the first electrode layer such that the current steering layer physically contacts the first electrode layer;
forming a second electrode layer on the current steering layer such that the second electrode layer physically contacts the current steering layer;
forming a corrosion-suppressing layer on the second electrode layer using a material having a higher standard electrode potential than a material of the second electrode layer;
forming an interlayer insulating layer such that the interlayer insulating layer covers the corrosion-suppressing layer, the second electrode layer, the current steering layer and the first electrode layer;
forming a trench in the interlayer insulating layer such that the corrosion-suppressing layer is exposed and the second electrode layer is not exposed in a lower opening of the trench; and
washing an interior of the trench using a washing liquid containing water.
3. The method of manufacturing the current steering element according to claim 1 ,
wherein in the step of forming the via hole, the via hole is formed such that the corrosion-suppressing layer protrudes outward over an entire outer periphery of the lower opening of the via hole when viewed from a thickness direction of the interlayer insulating layer.
4. The method of manufacturing the current steering element according to claim 1 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using a material having a standard electrode potential which is equal to or higher than 0.
5. The method of manufacturing the current steering element according to claim 1 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using precious metal.
6. The method of manufacturing the current steering element according to claim 1 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using a metal oxide having an electric conductivity.
7. The method of manufacturing the current steering element according to claim 1 , wherein in the step of forming the first electrode layer, the first electrode layer is formed using at least one material selected from a group consisting of tantalum nitride, titanium nitride, tungsten, and a metal oxide;
wherein in the step of forming the current steering layer, the current steering layer is formed using silicon nitride; and
wherein in the step of forming the second electrode layer, the first electrode layer is formed using at least one material selected from a group consisting of tantalum nitride, titanium nitride, tungsten, and a metal oxide.
8. A method of manufacturing a non-volatile memory element comprising:
forming the current steering element by the method of manufacturing the current steering element as recited in claim 1 ; and
forming a bipolar variable resistance element which is connected in series with the current steering element and reversibly changes its resistance state between a higher-resistance state and a lower-resistance state by application of two electric pulses which are different in polarity.
9. The method of manufacturing the current steering element according to claim 1 ,
wherein in the step of forming the current steering layer, the current steering layer is formed using a semiconductor; and
wherein the first electrode layer, the current steering layer, and the second electrode layer constitute a MSM diode.
10. The method of manufacturing the current steering element according to claim 2 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using a material having a standard electrode potential which is equal to or higher than 0.
11. The method of manufacturing the current steering element according to claim 2 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using precious metal.
12. The method of manufacturing the current steering element according to claim 2 , wherein in the step of forming the corrosion-suppressing layer, the corrosion-suppressing layer is formed using a metal oxide having an electric conductivity.
13. The method of manufacturing the current steering element according to claim 2 , wherein in the step of forming the first electrode layer, the first electrode layer is formed using at least one material selected from a group consisting of tantalum nitride, titanium nitride, tungsten, and a metal oxide;
wherein in the step of forming the current steering layer, the current steering layer is formed using silicon nitride; and
wherein in the step of forming the second electrode layer, the first electrode layer is formed using at least one material selected from a group consisting of tantalum nitride, titanium nitride, tungsten, and a metal oxide.
14. A method of manufacturing a non-volatile memory element comprising:
forming the current steering element by the method of manufacturing the current steering element as recited in claim 2 ; and
forming a bipolar variable resistance element which is connected in series with the current steering element and reversibly changes its resistance state between a higher-resistance state and a lower-resistance state by application of two electric pulses which are different in polarity.
15. The method of manufacturing the current steering element according to claim 2 ,
wherein in the step of forming the current steering layer, the current steering layer is formed using a semiconductor; and
wherein the first electrode layer, the current steering layer, and the second electrode layer constitute a MSM diode.