IP Library Granted Patent US 8,937,330
Granted Patent B2
US 8,937,330 · App. 13/823,677 · Granted Jan 20, 2015

Radiation-emitting component

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Quick Facts
Patent No.
US 8,937,330
App. No.
13/823,677
Granted
Jan 20, 2015
Kind
B2
Abstract

The invention relates to a radiation-emitting component comprising a semiconductor body which emits electromagnetic radiation from a radiation exit surface during operation. The semiconductor body is arranged in a component housing having a cutout. The component further comprises an optical element which is connected to the component housing in a mechanically stable manner by means of a joining layer. The modulus of elasticity of the joining layer is lower than or equal to 30 MPa.

Claims (33)

1. A radiation-emitting component comprising:

a semiconductor body configured to emit electromagnetic radiation from a radiation exit surface during operation;

a component housing encompassing the semiconductor body, wherein the semiconductor body is arranged in a cutout of the component housing and the cutout of the component housing is filled with a potting; and

an optical element cohesively connected to the component housing by a joining layer,

wherein the joining layer has a modulus of elasticity of less than or equal to 30 MPa,

wherein the optical element has a modulus of elasticity of greater than or equal to 3500 MPa and/or a Shore hardness of greater than or equal to D80, and

wherein the potting has a modulus of elasticity of greater than or equal to 3000 MPa and/or a Shore hardness of greater than or equal to D80, and

wherein the joining layer has a thickness of at least 30 μm.

2. The radiation-emitting component according to claim 1 , wherein the modulus of elasticity of the joining layer is less than or equal to 10 MPa.

3. The radiation-emitting component according to claim 1 , wherein the joining layer has a Shore hardness of less than or equal to A90.

4. The radiation-emitting component according to claim 1 , wherein the joining layer comprises at least one of silicone, an epoxide, a silicone-epoxide hybrid, or polyurethane.

5. The radiation-emitting component according to claim 1 , wherein the joining layer has a thickness of at least 50 μm.

6. The radiation-emitting component according to claim 1 , wherein the optical element comprises at least one of an epoxide, silicone, a silicone-epoxide hybrid, glass, or a thermoplastic.

7. The radiation-emitting component according to claim 1 , wherein the potting comprises at least one of an epoxide, silicone, a silicone-epoxide hybrid, or polyurethane.

8. The radiation-emitting component according to claim 1 , wherein a jump in refractive index between the joining layer and the optical element is less than or equal to 0.3.

9. The radiation-emitting component according to claim 1 , wherein a jump in refractive index between the joining layer and the optical element is less than or equal to 0.1.

10. The radiation-emitting component according to claim 1 , wherein a jump in refractive index between the potting and the joining layer is less than or equal to 0.3.

11. The radiation-emitting component according to claim 1 , wherein a jump in refractive index between the potting and the joining layer is less than or equal to 0.1.

12. The radiation-emitting component according to claim 1 , wherein a main surface of the joining layer runs parallel to the radiation exit surface of the semiconductor body.

13. The radiation-emitting component according to claim 1 , wherein the optical element has a modulus of elasticity of greater than or equal to 3500 MPa.

14. The radiation-emitting component according to claim 1 , wherein the optical element has a Shore hardness of greater than or equal to D80.

15. The radiation-emitting component according to claim 1 , wherein the optical element has a modulus of elasticity of greater than or equal to 3500 MPa and a Shore hardness of greater than or equal to D80.

16. The radiation-emitting component according to claim 1 , wherein the potting has a modulus of elasticity of greater than or equal to 3000 MPa.

17. The radiation-emitting component according to claim 1 , wherein the potting has a Shore hardness of greater than or equal to D80.

18. The radiation-emitting component according to claim 1 , wherein the potting has a modulus of elasticity of greater than or equal to 3000 MPa and a Shore hardness of greater than or equal to D80.

19. A radiation-emitting component comprising:

a semiconductor body configured to emit electromagnetic radiation from a radiation exit surface during operation;

a component housing encompassing the semiconductor body; and

an optical element cohesively connected to the component housing by a joining layer, wherein the joining layer has a modulus of elasticity of less than or equal to Shore A 45,

wherein the optical element has a modulus of elasticity of greater than or equal to 3500 MPa and/or a Shore hardness of greater than or equal to D80,

wherein the potting has a modulus of elasticity of greater than or equal to 3000 MPa and/or a Shore hardness of greater than or equal to D80,

wherein the joining layer has a thickness of at least 50 μm, and wherein the joining layer is of planar fashion in average.

20. The radiation-emitting component according to claim 1 , wherein the joining layer has a constant thickness along a lateral direction.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2013
From: SORG, JOERG ERICH; MUELLER, RUEDIGER; SCHWARZ, RAIMUND
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 030571/0064 →