Method for producing higher hydridosilane compounds

1. A process for preparing a high order hydridosilane compound from a low order hydridosilane compound, the process comprising:

thermally reacting a low order hydridosilane compound (I) in the presence of a hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol.

2. The process of claim 1 , wherein the low order hydridosilane compound (I) is a linear or branched hydridosilane of formula Si n H 2n+2 , wherein n is an integer from 3 to 10.

3. The process of claim 2 , wherein the low order hydridosilane compound (I) is neopentasilane.

4. The process of claim 1 , wherein the hydridosilane compound (II) has a weight average molecular weight in the range of 500-5000.

5. The process of claim 1 , wherein the hydridosilane compound (II) is a hydridosilane compound obtained by thermally treating low order hydridosilanes.

6. The process of claim 5 , wherein the hydridosilane compound (II) is a hydridosilane having a weight average molecular weight of at least 500 g/mol and obtained by a-thermally treating low order hydridosilanes of the formulae Si n H 2n , wherein n is an integer from 3 to 10; Si n H 2n+2 , wherein n is an integer from 3 to 10; and Si n H 2n−2 , wherein n is an integer from 6 to 10, respectively.

7. The process of claim 1 , wherein the weight fraction of the hydridosilane compound (II) is from 0.01-10% by weight, based on the total mass of low order hydridosilane compound (I) and the hydridosilane compound (II).

8. The process of claim 1 , which is conducted as liquid phase process.

9. The process of claim 8 , wherein the process is conducted in the presence of at least one solvent.

10. The process of claim 9 , wherein a content of the solvent is from 20-80% by weight based on the total mass of the reaction mixture.

11. The process of claim 1 , wherein the reaction is conducted at a temperature in the range from 30-250° C.

12. The process of claim 1 , wherein the reaction is carried out for a time in the range from 0.1 to 12 h.

13. The process of claim 1 , further comprising, before or during the thermal reaction, adding a dopant to the reaction mixture, wherein the dopant is at least one selected from the group consisting of:

B 2 H 6 ;

BH x R 3-x , wherein x is 0, 1, or 2, and R is a C 1 -C 10 -alkyl or an unsaturated cyclic C 2 -C 10 -alkyl;

an ether-complexed BH x R 3-x or an amine-complexed BH x R 3-x , wherein x is an integer from 0 to 3 and R is a C 1 -C 10 -alkyl or an unsaturated cyclic C 2 -C 10 -alkyl;

Si 5 H 9 BR 2 , wherein R is H, Ph, or a C 1 -C 10 -alkyl;

Si 4 H 9 BR 2 , wherein R is H, Ph, or a C 1 -C 10 -alkyl;

red phosphorus;

white phosphorus (P 4 );

PH x R 3-x , wherein x is an integer from 0-3 and R is Ph, SiMe 3 , or a C 1 -C 10 -alkyl;

P 7 (SiR 3 ) 3 , wherein R is H, Ph, or a C 1 -C 10 -alkyl;

Si 5 H 9 PR 2 , wherein R is H, Ph, or a C 1 -C 10 alkyl; and

Si 4 H 9 PR 2 , wherein R is H, Ph, or a C 1 -C 10 -alkyl.

14. A hydridosilane compound obtained by the process of claim 1 .

15. A layer comprising the hydridosilane compound of claim 14 , wherein the layer is an optoelectronic component layer, an electronic component layer, or a layer comprising silicon.

16. The process of claim 1 , wherein the hydridosilane compound (II) has a weight average molecular weight in the range of 1000-4000.

17. The process of claim 1 , wherein the weight fraction of the hydridosilane compound (II) is from 0.5-5% by weight, based on the total mass of low order hydridosilane compound (I) and the hydridosilane compound (II).

18. The process of claim 1 , wherein the reaction is conducted at a temperature in the range from 90-180° C. and the reaction is free of a metal catalyst.

19. The process of claim 1 , wherein reaction is carried out for a time in the range from 1 to 8 h and a molecular weight of the high order hydridosilane obtained is 800 g/mol or more.

20. A process for preparing a high order hydridosilane compound from a low order hydridosilane compound, the process comprising:

thermally reacting a low order branched hydridosilane compound of formula (I) in the presence of a hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol:

Si n H 2n+2   (I)

wherein n is an average value of 4 to 10,

and wherein a molecular weight of the high order hydridosilane obtained is 800 g/mol or more.