Granted Patent B2

US 8,995,804 · App. 13/824,726 · Granted Mar 31, 2015

Abstract

Claims (15)

1. A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier comprising an active waveguide, a deep ridge photodetector and a first optical passive waveguide configured to inject an incoming light into the structure; the structure comprising a first spot size converter configured to couple the active waveguide to a second optical passive waveguide, and a second spot size converter configured to couple the second optical passive waveguide to an optical passive transition waveguide configured to evanescently couple the light to an active region of the photodiode.

2. The structure of claim 1 comprising a third spot size converter configured to allow coupling between the first optical passive waveguide and the active waveguide of the semiconductor optical amplifier.

3. The structure of claim 1 wherein the optical passive transition waveguide comprises an InGaAsP layer.

4. The structure of claim 1 wherein the active waveguide of the semiconductor optical amplifier and the optical passive transition waveguide are butt-coupled.

5. The structure of claim 1 wherein the passive transition waveguide is planar, at least in part, in the vicinity of the photodetector.

6. A receiver comprising a monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier comprising an active waveguide, a deep ridge photodetector and a first optical passive configured to inject an incoming light into the structure; the structure comprising a first spot size converter configured to couple the active waveguide to a second optical passive waveguide, and a second spot size converter configured to couple the second optical passive waveguide to an optical passive transition waveguide configured to evanescently couple the light to an active region of the photodiode.

7. The receiver of claim 6 comprising a third spot size converter configured to allow coupling between the first optical passive waveguide and the active waveguide of the semiconductor optical amplifier.

8. The receiver of claim 6 wherein the optical passive transition waveguide comprises an InGaAsP layer.

9. The receiver of claim 6 wherein the active waveguide of the semiconductor optical amplifier and the optical passive transition waveguide are butt-coupled.

10. The receiver of claim 6 wherein the passive transition waveguide is planar, at least in part, in the vicinity of the photodetector.

11. The structure of claim 1 , wherein the first and second optical passive waveguides are different portions of a same layer in the structure.

12. The receiver of claim 6 , wherein the first and second optical passive waveguides are different portions of a same layer in the structure.

13. A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier forming an optical path from a first optical passive waveguide to an active waveguide, from the active waveguide to a second optical passive waveguide positioned at a layer lower than the active waveguide, from the second optical passive waveguide to an optical passive transition waveguide, and from the optical passive transition waveguide to a deep ridge photodetector, and at least one spot size converter disposed between the first optical passive waveguide and the optical passive transition waveguide configured to evanescently couple the light to an active region of the photodiode.

14. The structure of claim 12 , wherein the first and second optical passive waveguides are different portions of a same layer in the structure.

15. The structure of claim 12 , wherein the active waveguide of the semiconductor optical amplifier is coupled by means of a first spot size converter to the second optical passive waveguide and the second optical passive waveguide is coupled by means of a second spot size converter to the passive transition waveguide.

Assignments (9)